Sungwoo Kim
2011
Diff: FlashWriter/stm32f4xx_flash.c
- Revision:
- 16:903b5a4433b4
diff -r bd0d12728506 -r 903b5a4433b4 FlashWriter/stm32f4xx_flash.c
--- /dev/null Thu Jan 01 00:00:00 1970 +0000
+++ b/FlashWriter/stm32f4xx_flash.c Mon Sep 02 13:32:33 2019 +0000
@@ -0,0 +1,1616 @@
+/**
+ ******************************************************************************
+ * @file stm32f4xx_flash.c
+ * @author MCD Application Team
+ * @version V1.7.1
+ * @date 20-May-2016
+ * @brief This file provides firmware functions to manage the following
+ * functionalities of the FLASH peripheral:
+ * + FLASH Interface configuration
+ * + FLASH Memory Programming
+ * + Option Bytes Programming
+ * + Interrupts and flags management
+ *
+ @verbatim
+ ===============================================================================
+ ##### How to use this driver #####
+ ===============================================================================
+ [..]
+ This driver provides functions to configure and program the FLASH memory
+ of all STM32F4xx devices. These functions are split in 4 groups:
+
+ (#) FLASH Interface configuration functions: this group includes the
+ management of the following features:
+ (++) Set the latency
+ (++) Enable/Disable the prefetch buffer
+ (++) Enable/Disable the Instruction cache and the Data cache
+ (++) Reset the Instruction cache and the Data cache
+
+ (#) FLASH Memory Programming functions: this group includes all needed
+ functions to erase and program the main memory:
+ (++) Lock and Unlock the FLASH interface
+ (++) Erase function: Erase sector, erase all sectors
+ (++) Program functions: byte, half word, word and double word
+
+ (#) Option Bytes Programming functions: this group includes all needed
+ functions to manage the Option Bytes:
+ (++) Set/Reset the write protection
+ (++) Set the Read protection Level
+ (++) Set the BOR level
+ (++) Program the user Option Bytes
+ (++) Launch the Option Bytes loader
+
+ (#) Interrupts and flags management functions: this group
+ includes all needed functions to:
+ (++) Enable/Disable the FLASH interrupt sources
+ (++) Get flags status
+ (++) Clear flags
+ (++) Get FLASH operation status
+ (++) Wait for last FLASH operation
+ @endverbatim
+ ******************************************************************************
+ * @attention
+ *
+ * <h2><center>© COPYRIGHT 2016 STMicroelectronics</center></h2>
+ *
+ * Licensed under MCD-ST Liberty SW License Agreement V2, (the "License");
+ * You may not use this file except in compliance with the License.
+ * You may obtain a copy of the License at:
+ *
+ * http://www.st.com/software_license_agreement_liberty_v2
+ *
+ * Unless required by applicable law or agreed to in writing, software
+ * distributed under the License is distributed on an "AS IS" BASIS,
+ * WITHOUT WARRANTIES OR CONDITIONS OF ANY KIND, either express or implied.
+ * See the License for the specific language governing permissions and
+ * limitations under the License.
+ *
+ ******************************************************************************
+ */
+
+/* Includes ------------------------------------------------------------------*/
+#include "stm32f4xx_flash.h"
+
+/** @addtogroup STM32F4xx_StdPeriph_Driver
+ * @{
+ */
+
+/** @defgroup FLASH
+ * @brief FLASH driver modules
+ * @{
+ */
+
+/* Private typedef -----------------------------------------------------------*/
+/* Private define ------------------------------------------------------------*/
+#define SECTOR_MASK ((uint32_t)0xFFFFFF07)
+
+/* Private macro -------------------------------------------------------------*/
+/* Private variables ---------------------------------------------------------*/
+/* Private function prototypes -----------------------------------------------*/
+/* Private functions ---------------------------------------------------------*/
+
+/** @defgroup FLASH_Private_Functions
+ * @{
+ */
+
+/** @defgroup FLASH_Group1 FLASH Interface configuration functions
+ * @brief FLASH Interface configuration functions
+ *
+
+@verbatim
+ ===============================================================================
+ ##### FLASH Interface configuration functions #####
+ ===============================================================================
+ [..]
+ This group includes the following functions:
+ (+) void FLASH_SetLatency(uint32_t FLASH_Latency)
+ To correctly read data from FLASH memory, the number of wait states (LATENCY)
+ must be correctly programmed according to the frequency of the CPU clock
+ (HCLK) and the supply voltage of the device.
+ [..]
+ For STM32F405xx/07xx and STM32F415xx/17xx devices
+ +-------------------------------------------------------------------------------------+
+ | Latency | HCLK clock frequency (MHz) |
+ | |---------------------------------------------------------------------|
+ | | voltage range | voltage range | voltage range | voltage range |
+ | | 2.7 V - 3.6 V | 2.4 V - 2.7 V | 2.1 V - 2.4 V | 1.8 V - 2.1 V |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |0WS(1CPU cycle)|0 < HCLK <= 30 |0 < HCLK <= 24 |0 < HCLK <= 22 |0 < HCLK <= 20 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |1WS(2CPU cycle)|30 < HCLK <= 60 |24 < HCLK <= 48 |22 < HCLK <= 44 |20 < HCLK <= 40 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |2WS(3CPU cycle)|60 < HCLK <= 90 |48 < HCLK <= 72 |44 < HCLK <= 66 |40 < HCLK <= 60 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |3WS(4CPU cycle)|90 < HCLK <= 120|72 < HCLK <= 96 |66 < HCLK <= 88 |60 < HCLK <= 80 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |4WS(5CPU cycle)|120< HCLK <= 150|96 < HCLK <= 120|88 < HCLK <= 110 |80 < HCLK <= 100 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |5WS(6CPU cycle)|150< HCLK <= 168|120< HCLK <= 144|110 < HCLK <= 132|100 < HCLK <= 120|
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |6WS(7CPU cycle)| NA |144< HCLK <= 168|132 < HCLK <= 154|120 < HCLK <= 140|
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |7WS(8CPU cycle)| NA | NA |154 < HCLK <= 168|140 < HCLK <= 160|
+ +---------------|----------------|----------------|-----------------|-----------------+
+
+ [..]
+ For STM32F42xxx/43xxx devices
+ +-------------------------------------------------------------------------------------+
+ | Latency | HCLK clock frequency (MHz) |
+ | |---------------------------------------------------------------------|
+ | | voltage range | voltage range | voltage range | voltage range |
+ | | 2.7 V - 3.6 V | 2.4 V - 2.7 V | 2.1 V - 2.4 V | 1.8 V - 2.1 V |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |0WS(1CPU cycle)|0 < HCLK <= 30 |0 < HCLK <= 24 |0 < HCLK <= 22 |0 < HCLK <= 20 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |1WS(2CPU cycle)|30 < HCLK <= 60 |24 < HCLK <= 48 |22 < HCLK <= 44 |20 < HCLK <= 40 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |2WS(3CPU cycle)|60 < HCLK <= 90 |48 < HCLK <= 72 |44 < HCLK <= 66 |40 < HCLK <= 60 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |3WS(4CPU cycle)|90 < HCLK <= 120|72 < HCLK <= 96 |66 < HCLK <= 88 |60 < HCLK <= 80 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |4WS(5CPU cycle)|120< HCLK <= 150|96 < HCLK <= 120|88 < HCLK <= 110 |80 < HCLK <= 100 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |5WS(6CPU cycle)|120< HCLK <= 180|120< HCLK <= 144|110 < HCLK <= 132|100 < HCLK <= 120|
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |6WS(7CPU cycle)| NA |144< HCLK <= 168|132 < HCLK <= 154|120 < HCLK <= 140|
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |7WS(8CPU cycle)| NA |168< HCLK <= 180|154 < HCLK <= 176|140 < HCLK <= 160|
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |8WS(9CPU cycle)| NA | NA |176 < HCLK <= 180|160 < HCLK <= 168|
+ +-------------------------------------------------------------------------------------+
+
+ [..]
+ For STM32F401x devices
+ +-------------------------------------------------------------------------------------+
+ | Latency | HCLK clock frequency (MHz) |
+ | |---------------------------------------------------------------------|
+ | | voltage range | voltage range | voltage range | voltage range |
+ | | 2.7 V - 3.6 V | 2.4 V - 2.7 V | 2.1 V - 2.4 V | 1.8 V - 2.1 V |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |0WS(1CPU cycle)|0 < HCLK <= 30 |0 < HCLK <= 24 |0 < HCLK <= 22 |0 < HCLK <= 20 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |1WS(2CPU cycle)|30 < HCLK <= 60 |24 < HCLK <= 48 |22 < HCLK <= 44 |20 < HCLK <= 40 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |2WS(3CPU cycle)|60 < HCLK <= 84 |48 < HCLK <= 72 |44 < HCLK <= 66 |40 < HCLK <= 60 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |3WS(4CPU cycle)| NA |72 < HCLK <= 84 |66 < HCLK <= 84 |60 < HCLK <= 80 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |4WS(5CPU cycle)| NA | NA | NA |80 < HCLK <= 84 |
+ +-------------------------------------------------------------------------------------+
+
+ [..]
+ For STM32F410xx/STM32F411xE devices
+ +-------------------------------------------------------------------------------------+
+ | Latency | HCLK clock frequency (MHz) |
+ | |---------------------------------------------------------------------|
+ | | voltage range | voltage range | voltage range | voltage range |
+ | | 2.7 V - 3.6 V | 2.4 V - 2.7 V | 2.1 V - 2.4 V | 1.8 V - 2.1 V |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |0WS(1CPU cycle)|0 < HCLK <= 30 |0 < HCLK <= 24 |0 < HCLK <= 18 |0 < HCLK <= 16 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |1WS(2CPU cycle)|30 < HCLK <= 64 |24 < HCLK <= 48 |18 < HCLK <= 36 |16 < HCLK <= 32 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |2WS(3CPU cycle)|64 < HCLK <= 90 |48 < HCLK <= 72 |36 < HCLK <= 54 |32 < HCLK <= 48 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |3WS(4CPU cycle)|90 < HCLK <= 100|72 < HCLK <= 96 |54 < HCLK <= 72 |48 < HCLK <= 64 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |4WS(5CPU cycle)| NA |96 < HCLK <= 100|72 < HCLK <= 90 |64 < HCLK <= 80 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |5WS(6CPU cycle)| NA | NA |90 < HCLK <= 100 |80 < HCLK <= 96 |
+ |---------------|----------------|----------------|-----------------|-----------------|
+ |6WS(7CPU cycle)| NA | NA | NA |96 < HCLK <= 100 |
+ +-------------------------------------------------------------------------------------+
+
+ [..]
+ +-------------------------------------------------------------------------------------------------------------------+
+ | | voltage range | voltage range | voltage range | voltage range | voltage range 2.7 V - 3.6 V |
+ | | 2.7 V - 3.6 V | 2.4 V - 2.7 V | 2.1 V - 2.4 V | 1.8 V - 2.1 V | with External Vpp = 9V |
+ |---------------|----------------|----------------|-----------------|-----------------|-----------------------------|
+ |Max Parallelism| x32 | x16 | x8 | x64 |
+ |---------------|----------------|----------------|-----------------|-----------------|-----------------------------|
+ |PSIZE[1:0] | 10 | 01 | 00 | 11 |
+ +-------------------------------------------------------------------------------------------------------------------+
+
+ -@- On STM32F405xx/407xx and STM32F415xx/417xx devices:
+ (++) when VOS = '0' Scale 2 mode, the maximum value of fHCLK = 144MHz.
+ (++) when VOS = '1' Scale 1 mode, the maximum value of fHCLK = 168MHz.
+ [..]
+ On STM32F42xxx/43xxx devices:
+ (++) when VOS[1:0] = '0x01' Scale 3 mode, the maximum value of fHCLK is 120MHz.
+ (++) when VOS[1:0] = '0x10' Scale 2 mode, the maximum value of fHCLK is 144MHz if OverDrive OFF and 168MHz if OverDrive ON.
+ (++) when VOS[1:0] = '0x11' Scale 1 mode, the maximum value of fHCLK is 168MHz if OverDrive OFF and 180MHz if OverDrive ON.
+ [..]
+ On STM32F401x devices:
+ (++) when VOS[1:0] = '0x01' Scale 3 mode, the maximum value of fHCLK is 60MHz.
+ (++) when VOS[1:0] = '0x10' Scale 2 mode, the maximum value of fHCLK is 84MHz.
+ [..]
+ On STM32F410xx/STM32F411xE devices:
+ (++) when VOS[1:0] = '0x01' Scale 3 mode, the maximum value of fHCLK is 64MHz.
+ (++) when VOS[1:0] = '0x10' Scale 2 mode, the maximum value of fHCLK is 84MHz.
+ (++) when VOS[1:0] = '0x11' Scale 1 mode, the maximum value of fHCLK is 100MHz.
+
+ For more details please refer product DataSheet
+ You can use PWR_MainRegulatorModeConfig() function to control VOS bits.
+
+ (+) void FLASH_PrefetchBufferCmd(FunctionalState NewState)
+ (+) void FLASH_InstructionCacheCmd(FunctionalState NewState)
+ (+) void FLASH_DataCacheCmd(FunctionalState NewState)
+ (+) void FLASH_InstructionCacheReset(void)
+ (+) void FLASH_DataCacheReset(void)
+
+ [..]
+ The unlock sequence is not needed for these functions.
+
+@endverbatim
+ * @{
+ */
+
+/**
+ * @brief Sets the code latency value.
+ * @param FLASH_Latency: specifies the FLASH Latency value.
+ * This parameter can be one of the following values:
+ * @arg FLASH_Latency_0: FLASH Zero Latency cycle
+ * @arg FLASH_Latency_1: FLASH One Latency cycle
+ * @arg FLASH_Latency_2: FLASH Two Latency cycles
+ * @arg FLASH_Latency_3: FLASH Three Latency cycles
+ * @arg FLASH_Latency_4: FLASH Four Latency cycles
+ * @arg FLASH_Latency_5: FLASH Five Latency cycles
+ * @arg FLASH_Latency_6: FLASH Six Latency cycles
+ * @arg FLASH_Latency_7: FLASH Seven Latency cycles
+ * @arg FLASH_Latency_8: FLASH Eight Latency cycles
+ * @arg FLASH_Latency_9: FLASH Nine Latency cycles
+ * @arg FLASH_Latency_10: FLASH Teen Latency cycles
+ * @arg FLASH_Latency_11: FLASH Eleven Latency cycles
+ * @arg FLASH_Latency_12: FLASH Twelve Latency cycles
+ * @arg FLASH_Latency_13: FLASH Thirteen Latency cycles
+ * @arg FLASH_Latency_14: FLASH Fourteen Latency cycles
+ * @arg FLASH_Latency_15: FLASH Fifteen Latency cycles
+ *
+ * @note For STM32F405xx/407xx, STM32F415xx/417xx, STM32F401xx/411xE and STM32F412xG devices
+ * this parameter can be a value between FLASH_Latency_0 and FLASH_Latency_7.
+ *
+ * @note For STM32F42xxx/43xxx devices this parameter can be a value between
+ * FLASH_Latency_0 and FLASH_Latency_15.
+ *
+ * @retval None
+ */
+void FLASH_SetLatency(uint32_t FLASH_Latency)
+{
+ /* Check the parameters */
+ assert_param(IS_FLASH_LATENCY(FLASH_Latency));
+
+ /* Perform Byte access to FLASH_ACR[8:0] to set the Latency value */
+ *(__IO uint8_t *)ACR_BYTE0_ADDRESS = (uint8_t)FLASH_Latency;
+}
+
+/**
+ * @brief Enables or disables the Prefetch Buffer.
+ * @param NewState: new state of the Prefetch Buffer.
+ * This parameter can be: ENABLE or DISABLE.
+ * @retval None
+ */
+void FLASH_PrefetchBufferCmd(FunctionalState NewState)
+{
+ /* Check the parameters */
+ assert_param(IS_FUNCTIONAL_STATE(NewState));
+
+ /* Enable or disable the Prefetch Buffer */
+ if(NewState != DISABLE)
+ {
+ FLASH->ACR |= FLASH_ACR_PRFTEN;
+ }
+ else
+ {
+ FLASH->ACR &= (~FLASH_ACR_PRFTEN);
+ }
+}
+
+/**
+ * @brief Enables or disables the Instruction Cache feature.
+ * @param NewState: new state of the Instruction Cache.
+ * This parameter can be: ENABLE or DISABLE.
+ * @retval None
+ */
+void FLASH_InstructionCacheCmd(FunctionalState NewState)
+{
+ /* Check the parameters */
+ assert_param(IS_FUNCTIONAL_STATE(NewState));
+
+ if(NewState != DISABLE)
+ {
+ FLASH->ACR |= FLASH_ACR_ICEN;
+ }
+ else
+ {
+ FLASH->ACR &= (~FLASH_ACR_ICEN);
+ }
+}
+
+/**
+ * @brief Enables or disables the Data Cache feature.
+ * @param NewState: new state of the Data Cache.
+ * This parameter can be: ENABLE or DISABLE.
+ * @retval None
+ */
+void FLASH_DataCacheCmd(FunctionalState NewState)
+{
+ /* Check the parameters */
+ assert_param(IS_FUNCTIONAL_STATE(NewState));
+
+ if(NewState != DISABLE)
+ {
+ FLASH->ACR |= FLASH_ACR_DCEN;
+ }
+ else
+ {
+ FLASH->ACR &= (~FLASH_ACR_DCEN);
+ }
+}
+
+/**
+ * @brief Resets the Instruction Cache.
+ * @note This function must be used only when the Instruction Cache is disabled.
+ * @param None
+ * @retval None
+ */
+void FLASH_InstructionCacheReset(void)
+{
+ FLASH->ACR |= FLASH_ACR_ICRST;
+}
+
+/**
+ * @brief Resets the Data Cache.
+ * @note This function must be used only when the Data Cache is disabled.
+ * @param None
+ * @retval None
+ */
+void FLASH_DataCacheReset(void)
+{
+ FLASH->ACR |= FLASH_ACR_DCRST;
+}
+
+/**
+ * @}
+ */
+
+/** @defgroup FLASH_Group2 FLASH Memory Programming functions
+ * @brief FLASH Memory Programming functions
+ *
+@verbatim
+ ===============================================================================
+ ##### FLASH Memory Programming functions #####
+ ===============================================================================
+ [..]
+ This group includes the following functions:
+ (+) void FLASH_Unlock(void)
+ (+) void FLASH_Lock(void)
+ (+) FLASH_Status FLASH_EraseSector(uint32_t FLASH_Sector, uint8_t VoltageRange)
+ (+) FLASH_Status FLASH_EraseAllSectors(uint8_t VoltageRange)
+ (+) FLASH_Status FLASH_ProgramDoubleWord(uint32_t Address, uint64_t Data)
+ (+) FLASH_Status FLASH_ProgramWord(uint32_t Address, uint32_t Data)
+ (+) FLASH_Status FLASH_ProgramHalfWord(uint32_t Address, uint16_t Data)
+ (+) FLASH_Status FLASH_ProgramByte(uint32_t Address, uint8_t Data)
+ The following functions can be used only for STM32F42xxx/43xxx devices.
+ (+) FLASH_Status FLASH_EraseAllBank1Sectors(uint8_t VoltageRange)
+ (+) FLASH_Status FLASH_EraseAllBank2Sectors(uint8_t VoltageRange)
+ [..]
+ Any operation of erase or program should follow these steps:
+ (#) Call the FLASH_Unlock() function to enable the FLASH control register access
+
+ (#) Call the desired function to erase sector(s) or program data
+
+ (#) Call the FLASH_Lock() function to disable the FLASH control register access
+ (recommended to protect the FLASH memory against possible unwanted operation)
+
+@endverbatim
+ * @{
+ */
+
+/**
+ * @brief Unlocks the FLASH control register access
+ * @param None
+ * @retval None
+ */
+void FLASH_Unlock(void)
+{
+ if((FLASH->CR & FLASH_CR_LOCK) != RESET)
+ {
+ /* Authorize the FLASH Registers access */
+ FLASH->KEYR = FLASH_KEY1;
+ FLASH->KEYR = FLASH_KEY2;
+ }
+}
+
+/**
+ * @brief Locks the FLASH control register access
+ * @param None
+ * @retval None
+ */
+void FLASH_Lock(void)
+{
+ /* Set the LOCK Bit to lock the FLASH Registers access */
+ FLASH->CR |= FLASH_CR_LOCK;
+}
+
+/**
+ * @brief Erases a specified FLASH Sector.
+ *
+ * @note If an erase and a program operations are requested simultaneously,
+ * the erase operation is performed before the program one.
+ *
+ * @param FLASH_Sector: The Sector number to be erased.
+ *
+ * @note For STM32F405xx/407xx and STM32F415xx/417xx devices this parameter can
+ * be a value between FLASH_Sector_0 and FLASH_Sector_11.
+ *
+ * For STM32F42xxx/43xxx devices this parameter can be a value between
+ * FLASH_Sector_0 and FLASH_Sector_23.
+ *
+ * For STM32F401xx devices this parameter can be a value between
+ * FLASH_Sector_0 and FLASH_Sector_5.
+ *
+ * For STM32F411xE and STM32F412xG devices this parameter can be a value between
+ * FLASH_Sector_0 and FLASH_Sector_7.
+ *
+ * For STM32F410xx devices this parameter can be a value between
+ * FLASH_Sector_0 and FLASH_Sector_4.
+ *
+ * @param VoltageRange: The device voltage range which defines the erase parallelism.
+ * This parameter can be one of the following values:
+ * @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V,
+ * the operation will be done by byte (8-bit)
+ * @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V,
+ * the operation will be done by half word (16-bit)
+ * @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V,
+ * the operation will be done by word (32-bit)
+ * @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
+ * the operation will be done by double word (64-bit)
+ *
+ * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2,
+ * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2.
+ */
+FLASH_Status FLASH_EraseSector(uint32_t FLASH_Sector, uint8_t VoltageRange)
+{
+ uint32_t tmp_psize = 0x0;
+ FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Check the parameters */
+ assert_param(IS_FLASH_SECTOR(FLASH_Sector));
+ assert_param(IS_VOLTAGERANGE(VoltageRange));
+
+ if(VoltageRange == VoltageRange_1)
+ {
+ tmp_psize = FLASH_PSIZE_BYTE;
+ }
+ else if(VoltageRange == VoltageRange_2)
+ {
+ tmp_psize = FLASH_PSIZE_HALF_WORD;
+ }
+ else if(VoltageRange == VoltageRange_3)
+ {
+ tmp_psize = FLASH_PSIZE_WORD;
+ }
+ else
+ {
+ tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
+ }
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ if(status == FLASH_COMPLETE2)
+ {
+ /* if the previous operation is completed, proceed to erase the sector */
+ FLASH->CR &= CR_PSIZE_MASK;
+ FLASH->CR |= tmp_psize;
+ FLASH->CR &= SECTOR_MASK;
+ FLASH->CR |= FLASH_CR_SER | FLASH_Sector;
+ FLASH->CR |= FLASH_CR_STRT;
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ /* if the erase operation is completed, disable the SER Bit */
+ FLASH->CR &= (~FLASH_CR_SER);
+ FLASH->CR &= SECTOR_MASK;
+ }
+ /* Return the Erase Status */
+ return status;
+}
+
+/**
+ * @brief Erases all FLASH Sectors.
+ *
+ * @note If an erase and a program operations are requested simultaneously,
+ * the erase operation is performed before the program one.
+ *
+ * @param VoltageRange: The device voltage range which defines the erase parallelism.
+ * This parameter can be one of the following values:
+ * @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V,
+ * the operation will be done by byte (8-bit)
+ * @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V,
+ * the operation will be done by half word (16-bit)
+ * @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V,
+ * the operation will be done by word (32-bit)
+ * @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
+ * the operation will be done by double word (64-bit)
+ *
+ * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2,
+ * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2.
+ */
+FLASH_Status FLASH_EraseAllSectors(uint8_t VoltageRange)
+{
+ uint32_t tmp_psize = 0x0;
+ FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+ assert_param(IS_VOLTAGERANGE(VoltageRange));
+
+ if(VoltageRange == VoltageRange_1)
+ {
+ tmp_psize = FLASH_PSIZE_BYTE;
+ }
+ else if(VoltageRange == VoltageRange_2)
+ {
+ tmp_psize = FLASH_PSIZE_HALF_WORD;
+ }
+ else if(VoltageRange == VoltageRange_3)
+ {
+ tmp_psize = FLASH_PSIZE_WORD;
+ }
+ else
+ {
+ tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
+ }
+ if(status == FLASH_COMPLETE2)
+ {
+ /* if the previous operation is completed, proceed to erase all sectors */
+#if defined(STM32F427_437xx) || defined(STM32F429_439xx) || defined(STM32F469_479xx)
+ FLASH->CR &= CR_PSIZE_MASK;
+ FLASH->CR |= tmp_psize;
+ FLASH->CR |= (FLASH_CR_MER1 | FLASH_CR_MER2);
+ FLASH->CR |= FLASH_CR_STRT;
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ /* if the erase operation is completed, disable the MER Bit */
+ FLASH->CR &= ~(FLASH_CR_MER1 | FLASH_CR_MER2);
+#endif /* STM32F427_437xx || STM32F429_439xx || STM32F469_479xx */
+
+#if defined(STM32F40_41xxx) || defined(STM32F401xx) || defined(STM32F410xx) || defined(STM32F411xE) || defined(STM32F412xG) || defined(STM32F446xx)
+ FLASH->CR &= CR_PSIZE_MASK;
+ FLASH->CR |= tmp_psize;
+ FLASH->CR |= FLASH_CR_MER;
+ FLASH->CR |= FLASH_CR_STRT;
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ /* if the erase operation is completed, disable the MER Bit */
+ FLASH->CR &= (~FLASH_CR_MER);
+#endif /* STM32F40_41xxx || STM32F401xx || STM32F410xx || STM32F411xE || STM32F412xG || STM32F446xx */
+
+ }
+ /* Return the Erase Status */
+ return status;
+}
+
+/**
+ * @brief Erases all FLASH Sectors in Bank 1.
+ *
+ * @note This function can be used only for STM32F42xxx/43xxx devices.
+ *
+ * @note If an erase and a program operations are requested simultaneously,
+ * the erase operation is performed before the program one.
+ *
+ * @param VoltageRange: The device voltage range which defines the erase parallelism.
+ * This parameter can be one of the following values:
+ * @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V,
+ * the operation will be done by byte (8-bit)
+ * @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V,
+ * the operation will be done by half word (16-bit)
+ * @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V,
+ * the operation will be done by word (32-bit)
+ * @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
+ * the operation will be done by double word (64-bit)
+ *
+ * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2,
+ * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2.
+ */
+FLASH_Status FLASH_EraseAllBank1Sectors(uint8_t VoltageRange)
+{
+ uint32_t tmp_psize = 0x0;
+ FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+ assert_param(IS_VOLTAGERANGE(VoltageRange));
+
+ if(VoltageRange == VoltageRange_1)
+ {
+ tmp_psize = FLASH_PSIZE_BYTE;
+ }
+ else if(VoltageRange == VoltageRange_2)
+ {
+ tmp_psize = FLASH_PSIZE_HALF_WORD;
+ }
+ else if(VoltageRange == VoltageRange_3)
+ {
+ tmp_psize = FLASH_PSIZE_WORD;
+ }
+ else
+ {
+ tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
+ }
+ if(status == FLASH_COMPLETE2)
+ {
+ /* if the previous operation is completed, proceed to erase all sectors */
+ FLASH->CR &= CR_PSIZE_MASK;
+ FLASH->CR |= tmp_psize;
+ FLASH->CR |= FLASH_CR_MER1;
+ FLASH->CR |= FLASH_CR_STRT;
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ /* if the erase operation is completed, disable the MER Bit */
+ FLASH->CR &= (~FLASH_CR_MER1);
+
+ }
+ /* Return the Erase Status */
+ return status;
+}
+
+
+/**
+ * @brief Erases all FLASH Sectors in Bank 2.
+ *
+ * @note This function can be used only for STM32F42xxx/43xxx devices.
+ *
+ * @note If an erase and a program operations are requested simultaneously,
+ * the erase operation is performed before the program one.
+ *
+ * @param VoltageRange: The device voltage range which defines the erase parallelism.
+ * This parameter can be one of the following values:
+ * @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V,
+ * the operation will be done by byte (8-bit)
+ * @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V,
+ * the operation will be done by half word (16-bit)
+ * @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V,
+ * the operation will be done by word (32-bit)
+ * @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
+ * the operation will be done by double word (64-bit)
+ *
+ * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2,
+ * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2.
+ */
+FLASH_Status FLASH_EraseAllBank2Sectors(uint8_t VoltageRange)
+{
+ uint32_t tmp_psize = 0x0;
+ FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+ assert_param(IS_VOLTAGERANGE(VoltageRange));
+
+ if(VoltageRange == VoltageRange_1)
+ {
+ tmp_psize = FLASH_PSIZE_BYTE;
+ }
+ else if(VoltageRange == VoltageRange_2)
+ {
+ tmp_psize = FLASH_PSIZE_HALF_WORD;
+ }
+ else if(VoltageRange == VoltageRange_3)
+ {
+ tmp_psize = FLASH_PSIZE_WORD;
+ }
+ else
+ {
+ tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
+ }
+ if(status == FLASH_COMPLETE2)
+ {
+ /* if the previous operation is completed, proceed to erase all sectors */
+ FLASH->CR &= CR_PSIZE_MASK;
+ FLASH->CR |= tmp_psize;
+ FLASH->CR |= FLASH_CR_MER2;
+ FLASH->CR |= FLASH_CR_STRT;
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ /* if the erase operation is completed, disable the MER Bit */
+ FLASH->CR &= (~FLASH_CR_MER2);
+
+ }
+ /* Return the Erase Status */
+ return status;
+}
+
+/**
+ * @brief Programs a double word (64-bit) at a specified address.
+ * @note This function must be used when the device voltage range is from
+ * 2.7V to 3.6V and an External Vpp is present.
+ *
+ * @note If an erase and a program operations are requested simultaneously,
+ * the erase operation is performed before the program one.
+ *
+ * @param Address: specifies the address to be programmed.
+ * @param Data: specifies the data to be programmed.
+ * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2,
+ * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2.
+ */
+FLASH_Status FLASH_ProgramDoubleWord(uint32_t Address, uint64_t Data)
+{
+ FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Check the parameters */
+ assert_param(IS_FLASH_ADDRESS(Address));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ if(status == FLASH_COMPLETE2)
+ {
+ /* if the previous operation is completed, proceed to program the new data */
+ FLASH->CR &= CR_PSIZE_MASK;
+ FLASH->CR |= FLASH_PSIZE_DOUBLE_WORD;
+ FLASH->CR |= FLASH_CR_PG;
+
+ *(__IO uint64_t*)Address = Data;
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ /* if the program operation is completed, disable the PG Bit */
+ FLASH->CR &= (~FLASH_CR_PG);
+ }
+ /* Return the Program Status */
+ return status;
+}
+
+/**
+ * @brief Programs a word (32-bit) at a specified address.
+ *
+ * @note This function must be used when the device voltage range is from 2.7V to 3.6V.
+ *
+ * @note If an erase and a program operations are requested simultaneously,
+ * the erase operation is performed before the program one.
+ *
+ * @param Address: specifies the address to be programmed.
+ * This parameter can be any address in Program memory zone or in OTP zone.
+ * @param Data: specifies the data to be programmed.
+ * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2,
+ * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2.
+ */
+FLASH_Status FLASH_ProgramWord(uint32_t Address, uint32_t Data)
+{
+ FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Check the parameters */
+ assert_param(IS_FLASH_ADDRESS(Address));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ if(status == FLASH_COMPLETE2)
+ {
+ /* if the previous operation is completed, proceed to program the new data */
+ FLASH->CR &= CR_PSIZE_MASK;
+ FLASH->CR |= FLASH_PSIZE_WORD;
+ FLASH->CR |= FLASH_CR_PG;
+
+ *(__IO uint32_t*)Address = Data;
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ /* if the program operation is completed, disable the PG Bit */
+ FLASH->CR &= (~FLASH_CR_PG);
+ }
+ /* Return the Program Status */
+ return status;
+}
+
+/**
+ * @brief Programs a half word (16-bit) at a specified address.
+ * @note This function must be used when the device voltage range is from 2.1V to 3.6V.
+ *
+ * @note If an erase and a program operations are requested simultaneously,
+ * the erase operation is performed before the program one.
+ *
+ * @param Address: specifies the address to be programmed.
+ * This parameter can be any address in Program memory zone or in OTP zone.
+ * @param Data: specifies the data to be programmed.
+ * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2,
+ * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2.
+ */
+FLASH_Status FLASH_ProgramHalfWord(uint32_t Address, uint16_t Data)
+{
+ FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Check the parameters */
+ assert_param(IS_FLASH_ADDRESS(Address));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ if(status == FLASH_COMPLETE2)
+ {
+ /* if the previous operation is completed, proceed to program the new data */
+ FLASH->CR &= CR_PSIZE_MASK;
+ FLASH->CR |= FLASH_PSIZE_HALF_WORD;
+ FLASH->CR |= FLASH_CR_PG;
+
+ *(__IO uint16_t*)Address = Data;
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ /* if the program operation is completed, disable the PG Bit */
+ FLASH->CR &= (~FLASH_CR_PG);
+ }
+ /* Return the Program Status */
+ return status;
+}
+
+/**
+ * @brief Programs a byte (8-bit) at a specified address.
+ * @note This function can be used within all the device supply voltage ranges.
+ *
+ * @note If an erase and a program operations are requested simultaneously,
+ * the erase operation is performed before the program one.
+ *
+ * @param Address: specifies the address to be programmed.
+ * This parameter can be any address in Program memory zone or in OTP zone.
+ * @param Data: specifies the data to be programmed.
+ * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2,
+ * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2.
+ */
+FLASH_Status FLASH_ProgramByte(uint32_t Address, uint8_t Data)
+{
+ FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Check the parameters */
+ assert_param(IS_FLASH_ADDRESS(Address));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ if(status == FLASH_COMPLETE2)
+ {
+ /* if the previous operation is completed, proceed to program the new data */
+ FLASH->CR &= CR_PSIZE_MASK;
+ FLASH->CR |= FLASH_PSIZE_BYTE;
+ FLASH->CR |= FLASH_CR_PG;
+
+ *(__IO uint8_t*)Address = Data;
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ /* if the program operation is completed, disable the PG Bit */
+ FLASH->CR &= (~FLASH_CR_PG);
+ }
+
+ /* Return the Program Status */
+ return status;
+}
+
+/**
+ * @}
+ */
+
+/** @defgroup FLASH_Group3 Option Bytes Programming functions
+ * @brief Option Bytes Programming functions
+ *
+@verbatim
+ ===============================================================================
+ ##### Option Bytes Programming functions #####
+ ===============================================================================
+ [..]
+ This group includes the following functions:
+ (+) void FLASH_OB_Unlock(void)
+ (+) void FLASH_OB_Lock(void)
+ (+) void FLASH_OB_WRPConfig(uint32_t OB_WRP, FunctionalState NewState)
+ (+) void FLASH_OB_WRP1Config(uint32_t OB_WRP, FunctionalState NewState)
+ (+) void FLASH_OB_PCROPSelectionConfig(uint8_t OB_PCROPSelect)
+ (+) void FLASH_OB_PCROPConfig(uint32_t OB_PCROP, FunctionalState NewState)
+ (+) void FLASH_OB_PCROP1Config(uint32_t OB_PCROP, FunctionalState NewState)
+ (+) void FLASH_OB_RDPConfig(uint8_t OB_RDP)
+ (+) void FLASH_OB_UserConfig(uint8_t OB_IWDG, uint8_t OB_STOP, uint8_t OB_STDBY)
+ (+) void FLASH_OB_BORConfig(uint8_t OB_BOR)
+ (+) FLASH_Status FLASH_ProgramOTP(uint32_t Address, uint32_t Data)
+ (+) FLASH_Status FLASH_OB_Launch(void)
+ (+) uint32_t FLASH_OB_GetUser(void)
+ (+) uint8_t FLASH_OB_GetWRP(void)
+ (+) uint8_t FLASH_OB_GetWRP1(void)
+ (+) uint8_t FLASH_OB_GetPCROP(void)
+ (+) uint8_t FLASH_OB_GetPCROP1(void)
+ (+) uint8_t FLASH_OB_GetRDP(void)
+ (+) uint8_t FLASH_OB_GetBOR(void)
+ [..]
+ The following function can be used only for STM32F42xxx/43xxx devices.
+ (+) void FLASH_OB_BootConfig(uint8_t OB_BOOT)
+ [..]
+ Any operation of erase or program should follow these steps:
+ (#) Call the FLASH_OB_Unlock() function to enable the FLASH option control
+ register access
+
+ (#) Call one or several functions to program the desired Option Bytes:
+ (++) void FLASH_OB_WRPConfig(uint32_t OB_WRP, FunctionalState NewState)
+ => to Enable/Disable the desired sector write protection
+ (++) void FLASH_OB_RDPConfig(uint8_t OB_RDP) => to set the desired read
+ Protection Level
+ (++) void FLASH_OB_UserConfig(uint8_t OB_IWDG, uint8_t OB_STOP, uint8_t OB_STDBY)
+ => to configure the user Option Bytes.
+ (++) void FLASH_OB_BORConfig(uint8_t OB_BOR) => to set the BOR Level
+
+ (#) Once all needed Option Bytes to be programmed are correctly written,
+ call the FLASH_OB_Launch() function to launch the Option Bytes
+ programming process.
+
+ -@- When changing the IWDG mode from HW to SW or from SW to HW, a system
+ reset is needed to make the change effective.
+
+ (#) Call the FLASH_OB_Lock() function to disable the FLASH option control
+ register access (recommended to protect the Option Bytes against
+ possible unwanted operations)
+
+@endverbatim
+ * @{
+ */
+
+/**
+ * @brief Unlocks the FLASH Option Control Registers access.
+ * @param None
+ * @retval None
+ */
+void FLASH_OB_Unlock(void)
+{
+ if((FLASH->OPTCR & FLASH_OPTCR_OPTLOCK) != RESET)
+ {
+ /* Authorizes the Option Byte register programming */
+ FLASH->OPTKEYR = FLASH_OPT_KEY1;
+ FLASH->OPTKEYR = FLASH_OPT_KEY2;
+ }
+}
+
+/**
+ * @brief Locks the FLASH Option Control Registers access.
+ * @param None
+ * @retval None
+ */
+void FLASH_OB_Lock(void)
+{
+ /* Set the OPTLOCK Bit to lock the FLASH Option Byte Registers access */
+ FLASH->OPTCR |= FLASH_OPTCR_OPTLOCK;
+}
+
+/**
+ * @brief Enables or disables the write protection of the desired sectors, for the first
+ * 1 Mb of the Flash
+ *
+ * @note When the memory read protection level is selected (RDP level = 1),
+ * it is not possible to program or erase the flash sector i if CortexM4
+ * debug features are connected or boot code is executed in RAM, even if nWRPi = 1
+ * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).
+ *
+ * @param OB_WRP: specifies the sector(s) to be write protected or unprotected.
+ * This parameter can be one of the following values:
+ * @arg OB_WRP: A value between OB_WRP_Sector0 and OB_WRP_Sector11
+ * @arg OB_WRP_Sector_All
+ * @param Newstate: new state of the Write Protection.
+ * This parameter can be: ENABLE or DISABLE.
+ * @retval None
+ */
+void FLASH_OB_WRPConfig(uint32_t OB_WRP, FunctionalState NewState)
+{
+ FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Check the parameters */
+ assert_param(IS_OB_WRP(OB_WRP));
+ assert_param(IS_FUNCTIONAL_STATE(NewState));
+
+ status = FLASH_WaitForLastOperation2();
+
+ if(status == FLASH_COMPLETE2)
+ {
+ if(NewState != DISABLE)
+ {
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~OB_WRP);
+ }
+ else
+ {
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)OB_WRP;
+ }
+ }
+}
+
+/**
+ * @brief Enables or disables the write protection of the desired sectors, for the second
+ * 1 Mb of the Flash
+ *
+ * @note This function can be used only for STM32F42xxx/43xxx devices.
+ *
+ * @note When the memory read out protection is selected (RDP level = 1),
+ * it is not possible to program or erase the flash sector i if CortexM4
+ * debug features are connected or boot code is executed in RAM, even if nWRPi = 1
+ * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).
+ *
+ * @param OB_WRP: specifies the sector(s) to be write protected or unprotected.
+ * This parameter can be one of the following values:
+ * @arg OB_WRP: A value between OB_WRP_Sector12 and OB_WRP_Sector23
+ * @arg OB_WRP_Sector_All
+ * @param Newstate: new state of the Write Protection.
+ * This parameter can be: ENABLE or DISABLE.
+ * @retval None
+ */
+void FLASH_OB_WRP1Config(uint32_t OB_WRP, FunctionalState NewState)
+{
+ FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Check the parameters */
+ assert_param(IS_OB_WRP(OB_WRP));
+ assert_param(IS_FUNCTIONAL_STATE(NewState));
+
+ status = FLASH_WaitForLastOperation2();
+
+ if(status == FLASH_COMPLETE2)
+ {
+ if(NewState != DISABLE)
+ {
+ *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~OB_WRP);
+ }
+ else
+ {
+ *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)OB_WRP;
+ }
+ }
+}
+
+/**
+ * @brief Select the Protection Mode (SPRMOD).
+ *
+ * @note This function can be used only for STM32F42xxx/43xxx and STM32F401xx/411xE devices.
+ *
+ * @note After PCROP activation, Option Byte modification is not possible.
+ * Exception made for the global Read Out Protection modification level (level1 to level0)
+ * @note Once SPRMOD bit is active unprotection of a protected sector is not possible
+ *
+ * @note Read a protected sector will set RDERR Flag and write a protected sector will set WRPERR Flag
+ *
+ * @note Some Precautions should be taken when activating the PCROP feature :
+ * The active value of nWRPi bits is inverted when PCROP mode is active, this means if SPRMOD = 1
+ * and WRPi = 1 (default value), then the user sector i is read/write protected.
+ * In order to avoid activation of PCROP Mode for undesired sectors, please follow the
+ * below safety sequence :
+ * - Disable PCROP for all Sectors using FLASH_OB_PCROPConfig(OB_PCROP_Sector_All, DISABLE) function
+ * for Bank1 or FLASH_OB_PCROP1Config(OB_PCROP_Sector_All, DISABLE) function for Bank2
+ * - Enable PCROP for the desired Sector i using FLASH_OB_PCROPConfig(Sector i, ENABLE) function
+ * - Activate the PCROP Mode FLASH_OB_PCROPSelectionConfig() function.
+ *
+ * @param OB_PCROP: Select the Protection Mode of nWPRi bits
+ * This parameter can be one of the following values:
+ * @arg OB_PcROP_Disable: nWRPi control the write protection of respective user sectors.
+ * @arg OB_PcROP_Enable: nWRPi control the read&write protection (PCROP) of respective user sectors.
+ * @retval None
+ */
+void FLASH_OB_PCROPSelectionConfig(uint8_t OB_PcROP)
+{
+ uint8_t optiontmp = 0xFF;
+
+ /* Check the parameters */
+ assert_param(IS_OB_PCROP_SELECT(OB_PcROP));
+
+ /* Mask SPRMOD bit */
+ optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE3_ADDRESS) & (uint8_t)0x7F);
+ /* Update Option Byte */
+ *(__IO uint8_t *)OPTCR_BYTE3_ADDRESS = (uint8_t)(OB_PcROP | optiontmp);
+
+}
+
+/**
+ * @brief Enables or disables the read/write protection (PCROP) of the desired
+ * sectors, for the first 1 MB of the Flash.
+ *
+ * @note This function can be used only for STM32F42xxx/43xxx , STM32F401xx/411xE
+ * and STM32F412xG devices.
+ *
+ * @param OB_PCROP: specifies the sector(s) to be read/write protected or unprotected.
+ * This parameter can be one of the following values:
+ * @arg OB_PCROP: A value between OB_PCROP_Sector0 and OB_PCROP_Sector11 for
+ * STM32F42xxx/43xxx devices and between OB_PCROP_Sector0 and
+ * OB_PCROP_Sector5 for STM32F401xx/411xE devices.
+ * @arg OB_PCROP_Sector_All
+ * @param Newstate: new state of the Write Protection.
+ * This parameter can be: ENABLE or DISABLE.
+ * @retval None
+ */
+void FLASH_OB_PCROPConfig(uint32_t OB_PCROP, FunctionalState NewState)
+{
+ FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Check the parameters */
+ assert_param(IS_OB_PCROP(OB_PCROP));
+ assert_param(IS_FUNCTIONAL_STATE(NewState));
+
+ status = FLASH_WaitForLastOperation2();
+
+ if(status == FLASH_COMPLETE2)
+ {
+ if(NewState != DISABLE)
+ {
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)OB_PCROP;
+ }
+ else
+ {
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~OB_PCROP);
+ }
+ }
+}
+
+/**
+ * @brief Enables or disables the read/write protection (PCROP) of the desired
+ * sectors
+ *
+ * @note This function can be used only for STM32F42xxx/43xxx devices.
+ *
+ * @param OB_PCROP: specifies the sector(s) to be read/write protected or unprotected.
+ * This parameter can be one of the following values:
+ * @arg OB_PCROP: A value between OB_PCROP_Sector12 and OB_PCROP_Sector23
+ * @arg OB_PCROP_Sector_All
+ * @param Newstate: new state of the Write Protection.
+ * This parameter can be: ENABLE or DISABLE.
+ * @retval None
+ */
+void FLASH_OB_PCROP1Config(uint32_t OB_PCROP, FunctionalState NewState)
+{
+ FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Check the parameters */
+ assert_param(IS_OB_PCROP(OB_PCROP));
+ assert_param(IS_FUNCTIONAL_STATE(NewState));
+
+ status = FLASH_WaitForLastOperation2();
+
+ if(status == FLASH_COMPLETE2)
+ {
+ if(NewState != DISABLE)
+ {
+ *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)OB_PCROP;
+ }
+ else
+ {
+ *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~OB_PCROP);
+ }
+ }
+}
+
+
+/**
+ * @brief Sets the read protection level.
+ * @param OB_RDP: specifies the read protection level.
+ * This parameter can be one of the following values:
+ * @arg OB_RDP_Level_0: No protection
+ * @arg OB_RDP_Level_1: Read protection of the memory
+ * @arg OB_RDP_Level_2: Full chip protection
+ *
+ * /!\ Warning /!\ When enabling OB_RDP level 2 it's no more possible to go back to level 1 or 0
+ *
+ * @retval None
+ */
+void FLASH_OB_RDPConfig(uint8_t OB_RDP)
+{
+ FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Check the parameters */
+ assert_param(IS_OB_RDP(OB_RDP));
+
+ status = FLASH_WaitForLastOperation2();
+
+ if(status == FLASH_COMPLETE2)
+ {
+ *(__IO uint8_t*)OPTCR_BYTE1_ADDRESS = OB_RDP;
+
+ }
+}
+
+/**
+ * @brief Programs the FLASH User Option Byte: IWDG_SW / RST_STOP / RST_STDBY.
+ * @param OB_IWDG: Selects the IWDG mode
+ * This parameter can be one of the following values:
+ * @arg OB_IWDG_SW: Software IWDG selected
+ * @arg OB_IWDG_HW: Hardware IWDG selected
+ * @param OB_STOP: Reset event when entering STOP mode.
+ * This parameter can be one of the following values:
+ * @arg OB_STOP_NoRST: No reset generated when entering in STOP
+ * @arg OB_STOP_RST: Reset generated when entering in STOP
+ * @param OB_STDBY: Reset event when entering Standby mode.
+ * This parameter can be one of the following values:
+ * @arg OB_STDBY_NoRST: No reset generated when entering in STANDBY
+ * @arg OB_STDBY_RST: Reset generated when entering in STANDBY
+ * @retval None
+ */
+void FLASH_OB_UserConfig(uint8_t OB_IWDG, uint8_t OB_STOP, uint8_t OB_STDBY)
+{
+ uint8_t optiontmp = 0xFF;
+ FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Check the parameters */
+ assert_param(IS_OB_IWDG_SOURCE(OB_IWDG));
+ assert_param(IS_OB_STOP_SOURCE(OB_STOP));
+ assert_param(IS_OB_STDBY_SOURCE(OB_STDBY));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ if(status == FLASH_COMPLETE2)
+ {
+#if defined(STM32F427_437xx) || defined(STM32F429_439xx) || defined(STM32F469_479xx)
+ /* Mask OPTLOCK, OPTSTRT, BOR_LEV and BFB2 bits */
+ optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE0_ADDRESS) & (uint8_t)0x1F);
+#endif /* STM32F427_437xx || STM32F429_439xx || STM32F469_479xx */
+
+#if defined(STM32F40_41xxx) || defined(STM32F401xx) || defined(STM32F410xx) || defined(STM32F411xE) || defined(STM32F446xx)
+ /* Mask OPTLOCK, OPTSTRT and BOR_LEV bits */
+ optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE0_ADDRESS) & (uint8_t)0x0F);
+#endif /* STM32F40_41xxx || STM32F401xx || STM32F410xx || STM32F411xE || STM32F446xx */
+
+ /* Update User Option Byte */
+ *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS = OB_IWDG | (uint8_t)(OB_STDBY | (uint8_t)(OB_STOP | ((uint8_t)optiontmp)));
+ }
+}
+
+/**
+ * @brief Configure the Dual Bank Boot.
+ *
+ * @note This function can be used only for STM32F42xxx/43xxx devices.
+ *
+ * @param OB_BOOT: specifies the Dual Bank Boot Option byte.
+ * This parameter can be one of the following values:
+ * @arg OB_Dual_BootEnabled: Dual Bank Boot Enable
+ * @arg OB_Dual_BootDisabled: Dual Bank Boot Disabled
+ * @retval None
+ */
+void FLASH_OB_BootConfig(uint8_t OB_BOOT)
+{
+ /* Check the parameters */
+ assert_param(IS_OB_BOOT(OB_BOOT));
+
+ /* Set Dual Bank Boot */
+ *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BFB2);
+ *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= OB_BOOT;
+
+}
+
+/**
+ * @brief Sets the BOR Level.
+ * @param OB_BOR: specifies the Option Bytes BOR Reset Level.
+ * This parameter can be one of the following values:
+ * @arg OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
+ * @arg OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
+ * @arg OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
+ * @arg OB_BOR_OFF: Supply voltage ranges from 1.62 to 2.1 V
+ * @retval None
+ */
+void FLASH_OB_BORConfig(uint8_t OB_BOR)
+{
+ /* Check the parameters */
+ assert_param(IS_OB_BOR(OB_BOR));
+
+ /* Set the BOR Level */
+ *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BOR_LEV);
+ *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= OB_BOR;
+
+}
+
+/**
+ * @brief Launch the option byte loading.
+ * @param None
+ * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2,
+ * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2.
+ */
+FLASH_Status FLASH_OB_Launch(void)
+{
+ FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Set the OPTSTRT bit in OPTCR register */
+ *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= FLASH_OPTCR_OPTSTRT;
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation2();
+
+ return status;
+}
+
+/**
+ * @brief Returns the FLASH User Option Bytes values.
+ * @param None
+ * @retval The FLASH User Option Bytes values: IWDG_SW(Bit0), RST_STOP(Bit1)
+ * and RST_STDBY(Bit2).
+ */
+uint8_t FLASH_OB_GetUser(void)
+{
+ /* Return the User Option Byte */
+ return (uint8_t)(FLASH->OPTCR >> 5);
+}
+
+/**
+ * @brief Returns the FLASH Write Protection Option Bytes value.
+ * @param None
+ * @retval The FLASH Write Protection Option Bytes value
+ */
+uint16_t FLASH_OB_GetWRP(void)
+{
+ /* Return the FLASH write protection Register value */
+ return (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS));
+}
+
+/**
+ * @brief Returns the FLASH Write Protection Option Bytes value.
+ *
+ * @note This function can be used only for STM32F42xxx/43xxx devices.
+ *
+ * @param None
+ * @retval The FLASH Write Protection Option Bytes value
+ */
+uint16_t FLASH_OB_GetWRP1(void)
+{
+ /* Return the FLASH write protection Register value */
+ return (*(__IO uint16_t *)(OPTCR1_BYTE2_ADDRESS));
+}
+
+/**
+ * @brief Returns the FLASH PC Read/Write Protection Option Bytes value.
+ *
+ * @note This function can be used only for STM32F42xxx/43xxx devices and STM32F401xx/411xE devices.
+ *
+ * @param None
+ * @retval The FLASH PC Read/Write Protection Option Bytes value
+ */
+uint16_t FLASH_OB_GetPCROP(void)
+{
+ /* Return the FLASH PC Read/write protection Register value */
+ return (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS));
+}
+
+/**
+ * @brief Returns the FLASH PC Read/Write Protection Option Bytes value.
+ *
+ * @note This function can be used only for STM32F42xxx/43xxx devices.
+ *
+ * @param None
+ * @retval The FLASH PC Read/Write Protection Option Bytes value
+ */
+uint16_t FLASH_OB_GetPCROP1(void)
+{
+ /* Return the FLASH write protection Register value */
+ return (*(__IO uint16_t *)(OPTCR1_BYTE2_ADDRESS));
+}
+
+/**
+ * @brief Returns the FLASH Read Protection level.
+ * @param None
+ * @retval FLASH ReadOut Protection Status:
+ * - SET, when OB_RDP_Level_1 or OB_RDP_Level_2 is set
+ * - RESET, when OB_RDP_Level_0 is set
+ */
+FlagStatus FLASH_OB_GetRDP(void)
+{
+ FlagStatus readstatus = RESET;
+
+ if ((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS) != (uint8_t)OB_RDP_Level_0))
+ {
+ readstatus = SET;
+ }
+ else
+ {
+ readstatus = RESET;
+ }
+ return readstatus;
+}
+
+/**
+ * @brief Returns the FLASH BOR level.
+ * @param None
+ * @retval The FLASH BOR level:
+ * - OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
+ * - OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
+ * - OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
+ * - OB_BOR_OFF : Supply voltage ranges from 1.62 to 2.1 V
+ */
+uint8_t FLASH_OB_GetBOR(void)
+{
+ /* Return the FLASH BOR level */
+ return (uint8_t)(*(__IO uint8_t *)(OPTCR_BYTE0_ADDRESS) & (uint8_t)0x0C);
+}
+
+/**
+ * @}
+ */
+
+/** @defgroup FLASH_Group4 Interrupts and flags management functions
+ * @brief Interrupts and flags management functions
+ *
+@verbatim
+ ===============================================================================
+ ##### Interrupts and flags management functions #####
+ ===============================================================================
+@endverbatim
+ * @{
+ */
+
+/**
+ * @brief Enables or disables the specified FLASH interrupts.
+ * @param FLASH_IT: specifies the FLASH interrupt sources to be enabled or disabled.
+ * This parameter can be any combination of the following values:
+ * @arg FLASH_IT_ERR: FLASH Error Interrupt
+ * @arg FLASH_IT_EOP: FLASH end of operation Interrupt
+ * @retval None
+ */
+void FLASH_ITConfig(uint32_t FLASH_IT, FunctionalState NewState)
+{
+ /* Check the parameters */
+ assert_param(IS_FLASH_IT(FLASH_IT));
+ assert_param(IS_FUNCTIONAL_STATE(NewState));
+
+ if(NewState != DISABLE)
+ {
+ /* Enable the interrupt sources */
+ FLASH->CR |= FLASH_IT;
+ }
+ else
+ {
+ /* Disable the interrupt sources */
+ FLASH->CR &= ~(uint32_t)FLASH_IT;
+ }
+}
+
+/**
+ * @brief Checks whether the specified FLASH flag is set or not.
+ * @param FLASH_FLAG: specifies the FLASH flag to check.
+ * This parameter can be one of the following values:
+ * @arg FLASH_FLAG_EOP: FLASH End of Operation flag
+ * @arg FLASH_FLAG_OPERR: FLASH operation Error flag
+ * @arg FLASH_FLAG_WRPERR: FLASH Write protected error flag
+ * @arg FLASH_FLAG_PGAERR: FLASH Programming Alignment error flag
+ * @arg FLASH_FLAG_PGPERR: FLASH Programming Parallelism error flag
+ * @arg FLASH_FLAG_PGSERR: FLASH Programming Sequence error flag
+ * @arg FLASH_FLAG_RDERR: FLASH (PCROP) Read Protection error flag (STM32F42xx/43xxx and STM32F401xx/411xE devices)
+ * @arg FLASH_FLAG_BSY: FLASH Busy flag
+ * @retval The new state of FLASH_FLAG (SET or RESET).
+ */
+FlagStatus FLASH_GetFlagStatus(uint32_t FLASH_FLAG)
+{
+ FlagStatus bitstatus = RESET;
+ /* Check the parameters */
+ assert_param(IS_FLASH_GET_FLAG(FLASH_FLAG));
+
+ if((FLASH->SR & FLASH_FLAG) != (uint32_t)RESET)
+ {
+ bitstatus = SET;
+ }
+ else
+ {
+ bitstatus = RESET;
+ }
+ /* Return the new state of FLASH_FLAG (SET or RESET) */
+ return bitstatus;
+}
+
+/**
+ * @brief Clears the FLASH's pending flags.
+ * @param FLASH_FLAG: specifies the FLASH flags to clear.
+ * This parameter can be any combination of the following values:
+ * @arg FLASH_FLAG_EOP: FLASH End of Operation flag
+ * @arg FLASH_FLAG_OPERR: FLASH operation Error flag
+ * @arg FLASH_FLAG_WRPERR: FLASH Write protected error flag
+ * @arg FLASH_FLAG_PGAERR: FLASH Programming Alignment error flag
+ * @arg FLASH_FLAG_PGPERR: FLASH Programming Parallelism error flag
+ * @arg FLASH_FLAG_PGSERR: FLASH Programming Sequence error flag
+ * @arg FLASH_FLAG_RDERR: FLASH Read Protection error flag (STM32F42xx/43xxx and STM32F401xx/411xE devices)
+ * @retval None
+ */
+void FLASH_ClearFlag(uint32_t FLASH_FLAG)
+{
+ /* Check the parameters */
+ assert_param(IS_FLASH_CLEAR_FLAG(FLASH_FLAG));
+
+ /* Clear the flags */
+ FLASH->SR = FLASH_FLAG;
+}
+
+/**
+ * @brief Returns the FLASH Status.
+ * @param None
+ * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2,
+ * FLASH_ERROR_WRP2, FLASH_ERROR_RD2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2.
+ */
+FLASH_Status FLASH_GetStatus(void)
+{
+ FLASH_Status flashstatus = FLASH_COMPLETE2;
+
+ if((FLASH->SR & FLASH_FLAG_BSY) == FLASH_FLAG_BSY)
+ {
+ flashstatus = FLASH_BUSY2;
+ }
+ else
+ {
+ if((FLASH->SR & FLASH_FLAG_WRPERR) != (uint32_t)0x00)
+ {
+ flashstatus = FLASH_ERROR_WRP2;
+ }
+ else
+ {
+ if((FLASH->SR & FLASH_FLAG_RDERR) != (uint32_t)0x00)
+ {
+ flashstatus = FLASH_ERROR_RD2;
+ }
+ else
+ {
+ if((FLASH->SR & (uint32_t)0xE0) != (uint32_t)0x00)
+ {
+ flashstatus = FLASH_ERROR_PROGRAM2;
+ }
+ else
+ {
+ if((FLASH->SR & FLASH_FLAG_OPERR) != (uint32_t)0x00)
+ {
+ flashstatus = FLASH_ERROR_OPERATION2;
+ }
+ else
+ {
+ flashstatus = FLASH_COMPLETE2;
+ }
+ }
+ }
+ }
+ }
+ /* Return the FLASH Status */
+ return flashstatus;
+}
+
+/**
+ * @brief Waits for a FLASH operation to complete.
+ * @param None
+ * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2,
+ * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2.
+ */
+FLASH_Status FLASH_WaitForLastOperation2(void)
+{
+ __IO FLASH_Status status = FLASH_COMPLETE2;
+
+ /* Check for the FLASH Status */
+ status = FLASH_GetStatus();
+
+ /* Wait for the FLASH operation to complete by polling on BUSY flag to be reset.
+ Even if the FLASH operation fails, the BUSY flag will be reset and an error
+ flag will be set */
+ while(status == FLASH_BUSY2)
+ {
+ status = FLASH_GetStatus();
+ }
+ /* Return the operation status */
+ return status;
+}
+
+/**
+ * @}
+ */
+
+/**
+ * @}
+ */
+
+/**
+ * @}
+ */
+
+/**
+ * @}
+ */
+
+/************************ (C) COPYRIGHT STMicroelectronics *****END OF FILE****/
\ No newline at end of file