Diff: eeprom_flash.cpp

Revision:

3:35953bc8607a

Parent:

2:a37f58f78b2b

--- a/eeprom_flash.cpp	Mon Sep 17 20:15:21 2018 +0000
+++ b/eeprom_flash.cpp	Tue Sep 18 06:39:30 2018 +0000
@@ -1,43 +1,23 @@
 #include "mbed.h"
 #include "eeprom_flash.h"
 
-/*
- * Debug option
- */
-#if 0
-//Enable debug
-#include <cstdio>
-#define DBG(x, ...) std::printf("[eeprom: DBG]"x"\r\n", ##__VA_ARGS__); 
-#define WARN(x, ...) std::printf("[eeprom: WARN]"x"\r\n", ##__VA_ARGS__); 
-#define ERR(x, ...) std::printf("[eeprom: ERR]"x"\r\n", ##__VA_ARGS__); 
-#else
-//Disable debug
-#define DBG(x, ...) 
-#define WARN(x, ...)
-#define ERR(x, ...) 
-#endif
-
-FLASH_EraseInitTypeDef eraseInit = {
-    FLASH_TYPEERASE_PAGES,  /*!< Pages erase only (Mass erase is disabled)*/
-    0,                      /*!< Select banks to erase when Mass erase is enabled.*/
-    EEPROM_START_ADDRESS,   /*!< Initial FLASH page address to erase when mass erase is disabled
-                                 This parameter must be a number between Min_Data = 0x08000000 and Max_Data = FLASH_BANKx_END 
-                                 (x = 1 or 2 depending on devices)*/
-    1                       /*!< Number of pagess to be erased.
-                                 This parameter must be a value between Min_Data = 1 and Max_Data = (max number of pages - value of initial page)*/
-};
- 
-uint32_t pageError;
-
+void _FLASH_PageErase(uint32_t PageAddress)
+{
+    /* Proceed to erase the page */
+    SET_BIT(FLASH->CR, FLASH_CR_PER);
+    while (FLASH->SR & FLASH_SR_BSY);
+    WRITE_REG(FLASH->AR, PageAddress);
+    SET_BIT(FLASH->CR, FLASH_CR_STRT);
+    while (FLASH->SR & FLASH_SR_BSY);
+    CLEAR_BIT(FLASH->CR, FLASH_CR_PER);
+}
 
 /*
  * Must call this first to enable writing
  */
 void enableEEPROMWriting() {
-    HAL_StatusTypeDef status = HAL_FLASH_Unlock();
-    //FLASH_PageErase(EEPROM_START_ADDRESS); // required to re-write
-    //CLEAR_BIT(FLASH->CR, FLASH_CR_PER); // Bug fix: bit PER has been set in Flash_PageErase(), must clear it here
-    HAL_FLASHEx_Erase(&eraseInit, &pageError);
+    HAL_FLASH_Unlock();
+    _FLASH_PageErase(EEPROM_START_ADDRESS);
 }
 
 void disableEEPROMWriting() {
@@ -51,18 +31,14 @@
 HAL_StatusTypeDef writeEEPROMHalfWord(uint32_t address, uint16_t data) {
     HAL_StatusTypeDef status;
     address = address + EEPROM_START_ADDRESS;
-    
     status = HAL_FLASH_Program(FLASH_TYPEPROGRAM_HALFWORD, address, data);
-    
     return status;
 }
 
 HAL_StatusTypeDef writeEEPROMWord(uint32_t address, uint32_t data) {
     HAL_StatusTypeDef status;
     address = address + EEPROM_START_ADDRESS;
-    
     status = HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, address, data);
-
     return status;
 }
 
@@ -73,7 +49,6 @@
     uint16_t val = 0;
     address = address + EEPROM_START_ADDRESS;
     val = *(__IO uint16_t*)address;
-    
     return val;
 }
 
@@ -81,6 +56,5 @@
     uint32_t val = 0;
     address = address + EEPROM_START_ADDRESS;
     val = *(__IO uint32_t*)address;
-    
     return val;
 }