Modified Motor Driver Firmware to include Flash + Thermal
Dependencies: FastPWM3 mbed-dev-STM-lean
Diff: FlashWriter/stm32f4xx_flash.c
- Revision:
- 23:2adf23ee0305
--- /dev/null Thu Jan 01 00:00:00 1970 +0000 +++ b/FlashWriter/stm32f4xx_flash.c Wed Apr 05 20:54:16 2017 +0000 @@ -0,0 +1,1616 @@ +/** + ****************************************************************************** + * @file stm32f4xx_flash.c + * @author MCD Application Team + * @version V1.7.1 + * @date 20-May-2016 + * @brief This file provides firmware functions to manage the following + * functionalities of the FLASH peripheral: + * + FLASH Interface configuration + * + FLASH Memory Programming + * + Option Bytes Programming + * + Interrupts and flags management + * + @verbatim + =============================================================================== + ##### How to use this driver ##### + =============================================================================== + [..] + This driver provides functions to configure and program the FLASH memory + of all STM32F4xx devices. These functions are split in 4 groups: + + (#) FLASH Interface configuration functions: this group includes the + management of the following features: + (++) Set the latency + (++) Enable/Disable the prefetch buffer + (++) Enable/Disable the Instruction cache and the Data cache + (++) Reset the Instruction cache and the Data cache + + (#) FLASH Memory Programming functions: this group includes all needed + functions to erase and program the main memory: + (++) Lock and Unlock the FLASH interface + (++) Erase function: Erase sector, erase all sectors + (++) Program functions: byte, half word, word and double word + + (#) Option Bytes Programming functions: this group includes all needed + functions to manage the Option Bytes: + (++) Set/Reset the write protection + (++) Set the Read protection Level + (++) Set the BOR level + (++) Program the user Option Bytes + (++) Launch the Option Bytes loader + + (#) Interrupts and flags management functions: this group + includes all needed functions to: + (++) Enable/Disable the FLASH interrupt sources + (++) Get flags status + (++) Clear flags + (++) Get FLASH operation status + (++) Wait for last FLASH operation + @endverbatim + ****************************************************************************** + * @attention + * + * <h2><center>© COPYRIGHT 2016 STMicroelectronics</center></h2> + * + * Licensed under MCD-ST Liberty SW License Agreement V2, (the "License"); + * You may not use this file except in compliance with the License. + * You may obtain a copy of the License at: + * + * http://www.st.com/software_license_agreement_liberty_v2 + * + * Unless required by applicable law or agreed to in writing, software + * distributed under the License is distributed on an "AS IS" BASIS, + * WITHOUT WARRANTIES OR CONDITIONS OF ANY KIND, either express or implied. + * See the License for the specific language governing permissions and + * limitations under the License. + * + ****************************************************************************** + */ + +/* Includes ------------------------------------------------------------------*/ +#include "stm32f4xx_flash.h" + +/** @addtogroup STM32F4xx_StdPeriph_Driver + * @{ + */ + +/** @defgroup FLASH + * @brief FLASH driver modules + * @{ + */ + +/* Private typedef -----------------------------------------------------------*/ +/* Private define ------------------------------------------------------------*/ +#define SECTOR_MASK ((uint32_t)0xFFFFFF07) + +/* Private macro -------------------------------------------------------------*/ +/* Private variables ---------------------------------------------------------*/ +/* Private function prototypes -----------------------------------------------*/ +/* Private functions ---------------------------------------------------------*/ + +/** @defgroup FLASH_Private_Functions + * @{ + */ + +/** @defgroup FLASH_Group1 FLASH Interface configuration functions + * @brief FLASH Interface configuration functions + * + +@verbatim + =============================================================================== + ##### FLASH Interface configuration functions ##### + =============================================================================== + [..] + This group includes the following functions: + (+) void FLASH_SetLatency(uint32_t FLASH_Latency) + To correctly read data from FLASH memory, the number of wait states (LATENCY) + must be correctly programmed according to the frequency of the CPU clock + (HCLK) and the supply voltage of the device. + [..] + For STM32F405xx/07xx and STM32F415xx/17xx devices + +-------------------------------------------------------------------------------------+ + | Latency | HCLK clock frequency (MHz) | + | |---------------------------------------------------------------------| + | | voltage range | voltage range | voltage range | voltage range | + | | 2.7 V - 3.6 V | 2.4 V - 2.7 V | 2.1 V - 2.4 V | 1.8 V - 2.1 V | + |---------------|----------------|----------------|-----------------|-----------------| + |0WS(1CPU cycle)|0 < HCLK <= 30 |0 < HCLK <= 24 |0 < HCLK <= 22 |0 < HCLK <= 20 | + |---------------|----------------|----------------|-----------------|-----------------| + |1WS(2CPU cycle)|30 < HCLK <= 60 |24 < HCLK <= 48 |22 < HCLK <= 44 |20 < HCLK <= 40 | + |---------------|----------------|----------------|-----------------|-----------------| + |2WS(3CPU cycle)|60 < HCLK <= 90 |48 < HCLK <= 72 |44 < HCLK <= 66 |40 < HCLK <= 60 | + |---------------|----------------|----------------|-----------------|-----------------| + |3WS(4CPU cycle)|90 < HCLK <= 120|72 < HCLK <= 96 |66 < HCLK <= 88 |60 < HCLK <= 80 | + |---------------|----------------|----------------|-----------------|-----------------| + |4WS(5CPU cycle)|120< HCLK <= 150|96 < HCLK <= 120|88 < HCLK <= 110 |80 < HCLK <= 100 | + |---------------|----------------|----------------|-----------------|-----------------| + |5WS(6CPU cycle)|150< HCLK <= 168|120< HCLK <= 144|110 < HCLK <= 132|100 < HCLK <= 120| + |---------------|----------------|----------------|-----------------|-----------------| + |6WS(7CPU cycle)| NA |144< HCLK <= 168|132 < HCLK <= 154|120 < HCLK <= 140| + |---------------|----------------|----------------|-----------------|-----------------| + |7WS(8CPU cycle)| NA | NA |154 < HCLK <= 168|140 < HCLK <= 160| + +---------------|----------------|----------------|-----------------|-----------------+ + + [..] + For STM32F42xxx/43xxx devices + +-------------------------------------------------------------------------------------+ + | Latency | HCLK clock frequency (MHz) | + | |---------------------------------------------------------------------| + | | voltage range | voltage range | voltage range | voltage range | + | | 2.7 V - 3.6 V | 2.4 V - 2.7 V | 2.1 V - 2.4 V | 1.8 V - 2.1 V | + |---------------|----------------|----------------|-----------------|-----------------| + |0WS(1CPU cycle)|0 < HCLK <= 30 |0 < HCLK <= 24 |0 < HCLK <= 22 |0 < HCLK <= 20 | + |---------------|----------------|----------------|-----------------|-----------------| + |1WS(2CPU cycle)|30 < HCLK <= 60 |24 < HCLK <= 48 |22 < HCLK <= 44 |20 < HCLK <= 40 | + |---------------|----------------|----------------|-----------------|-----------------| + |2WS(3CPU cycle)|60 < HCLK <= 90 |48 < HCLK <= 72 |44 < HCLK <= 66 |40 < HCLK <= 60 | + |---------------|----------------|----------------|-----------------|-----------------| + |3WS(4CPU cycle)|90 < HCLK <= 120|72 < HCLK <= 96 |66 < HCLK <= 88 |60 < HCLK <= 80 | + |---------------|----------------|----------------|-----------------|-----------------| + |4WS(5CPU cycle)|120< HCLK <= 150|96 < HCLK <= 120|88 < HCLK <= 110 |80 < HCLK <= 100 | + |---------------|----------------|----------------|-----------------|-----------------| + |5WS(6CPU cycle)|120< HCLK <= 180|120< HCLK <= 144|110 < HCLK <= 132|100 < HCLK <= 120| + |---------------|----------------|----------------|-----------------|-----------------| + |6WS(7CPU cycle)| NA |144< HCLK <= 168|132 < HCLK <= 154|120 < HCLK <= 140| + |---------------|----------------|----------------|-----------------|-----------------| + |7WS(8CPU cycle)| NA |168< HCLK <= 180|154 < HCLK <= 176|140 < HCLK <= 160| + |---------------|----------------|----------------|-----------------|-----------------| + |8WS(9CPU cycle)| NA | NA |176 < HCLK <= 180|160 < HCLK <= 168| + +-------------------------------------------------------------------------------------+ + + [..] + For STM32F401x devices + +-------------------------------------------------------------------------------------+ + | Latency | HCLK clock frequency (MHz) | + | |---------------------------------------------------------------------| + | | voltage range | voltage range | voltage range | voltage range | + | | 2.7 V - 3.6 V | 2.4 V - 2.7 V | 2.1 V - 2.4 V | 1.8 V - 2.1 V | + |---------------|----------------|----------------|-----------------|-----------------| + |0WS(1CPU cycle)|0 < HCLK <= 30 |0 < HCLK <= 24 |0 < HCLK <= 22 |0 < HCLK <= 20 | + |---------------|----------------|----------------|-----------------|-----------------| + |1WS(2CPU cycle)|30 < HCLK <= 60 |24 < HCLK <= 48 |22 < HCLK <= 44 |20 < HCLK <= 40 | + |---------------|----------------|----------------|-----------------|-----------------| + |2WS(3CPU cycle)|60 < HCLK <= 84 |48 < HCLK <= 72 |44 < HCLK <= 66 |40 < HCLK <= 60 | + |---------------|----------------|----------------|-----------------|-----------------| + |3WS(4CPU cycle)| NA |72 < HCLK <= 84 |66 < HCLK <= 84 |60 < HCLK <= 80 | + |---------------|----------------|----------------|-----------------|-----------------| + |4WS(5CPU cycle)| NA | NA | NA |80 < HCLK <= 84 | + +-------------------------------------------------------------------------------------+ + + [..] + For STM32F410xx/STM32F411xE devices + +-------------------------------------------------------------------------------------+ + | Latency | HCLK clock frequency (MHz) | + | |---------------------------------------------------------------------| + | | voltage range | voltage range | voltage range | voltage range | + | | 2.7 V - 3.6 V | 2.4 V - 2.7 V | 2.1 V - 2.4 V | 1.8 V - 2.1 V | + |---------------|----------------|----------------|-----------------|-----------------| + |0WS(1CPU cycle)|0 < HCLK <= 30 |0 < HCLK <= 24 |0 < HCLK <= 18 |0 < HCLK <= 16 | + |---------------|----------------|----------------|-----------------|-----------------| + |1WS(2CPU cycle)|30 < HCLK <= 64 |24 < HCLK <= 48 |18 < HCLK <= 36 |16 < HCLK <= 32 | + |---------------|----------------|----------------|-----------------|-----------------| + |2WS(3CPU cycle)|64 < HCLK <= 90 |48 < HCLK <= 72 |36 < HCLK <= 54 |32 < HCLK <= 48 | + |---------------|----------------|----------------|-----------------|-----------------| + |3WS(4CPU cycle)|90 < HCLK <= 100|72 < HCLK <= 96 |54 < HCLK <= 72 |48 < HCLK <= 64 | + |---------------|----------------|----------------|-----------------|-----------------| + |4WS(5CPU cycle)| NA |96 < HCLK <= 100|72 < HCLK <= 90 |64 < HCLK <= 80 | + |---------------|----------------|----------------|-----------------|-----------------| + |5WS(6CPU cycle)| NA | NA |90 < HCLK <= 100 |80 < HCLK <= 96 | + |---------------|----------------|----------------|-----------------|-----------------| + |6WS(7CPU cycle)| NA | NA | NA |96 < HCLK <= 100 | + +-------------------------------------------------------------------------------------+ + + [..] + +-------------------------------------------------------------------------------------------------------------------+ + | | voltage range | voltage range | voltage range | voltage range | voltage range 2.7 V - 3.6 V | + | | 2.7 V - 3.6 V | 2.4 V - 2.7 V | 2.1 V - 2.4 V | 1.8 V - 2.1 V | with External Vpp = 9V | + |---------------|----------------|----------------|-----------------|-----------------|-----------------------------| + |Max Parallelism| x32 | x16 | x8 | x64 | + |---------------|----------------|----------------|-----------------|-----------------|-----------------------------| + |PSIZE[1:0] | 10 | 01 | 00 | 11 | + +-------------------------------------------------------------------------------------------------------------------+ + + -@- On STM32F405xx/407xx and STM32F415xx/417xx devices: + (++) when VOS = '0' Scale 2 mode, the maximum value of fHCLK = 144MHz. + (++) when VOS = '1' Scale 1 mode, the maximum value of fHCLK = 168MHz. + [..] + On STM32F42xxx/43xxx devices: + (++) when VOS[1:0] = '0x01' Scale 3 mode, the maximum value of fHCLK is 120MHz. + (++) when VOS[1:0] = '0x10' Scale 2 mode, the maximum value of fHCLK is 144MHz if OverDrive OFF and 168MHz if OverDrive ON. + (++) when VOS[1:0] = '0x11' Scale 1 mode, the maximum value of fHCLK is 168MHz if OverDrive OFF and 180MHz if OverDrive ON. + [..] + On STM32F401x devices: + (++) when VOS[1:0] = '0x01' Scale 3 mode, the maximum value of fHCLK is 60MHz. + (++) when VOS[1:0] = '0x10' Scale 2 mode, the maximum value of fHCLK is 84MHz. + [..] + On STM32F410xx/STM32F411xE devices: + (++) when VOS[1:0] = '0x01' Scale 3 mode, the maximum value of fHCLK is 64MHz. + (++) when VOS[1:0] = '0x10' Scale 2 mode, the maximum value of fHCLK is 84MHz. + (++) when VOS[1:0] = '0x11' Scale 1 mode, the maximum value of fHCLK is 100MHz. + + For more details please refer product DataSheet + You can use PWR_MainRegulatorModeConfig() function to control VOS bits. + + (+) void FLASH_PrefetchBufferCmd(FunctionalState NewState) + (+) void FLASH_InstructionCacheCmd(FunctionalState NewState) + (+) void FLASH_DataCacheCmd(FunctionalState NewState) + (+) void FLASH_InstructionCacheReset(void) + (+) void FLASH_DataCacheReset(void) + + [..] + The unlock sequence is not needed for these functions. + +@endverbatim + * @{ + */ + +/** + * @brief Sets the code latency value. + * @param FLASH_Latency: specifies the FLASH Latency value. + * This parameter can be one of the following values: + * @arg FLASH_Latency_0: FLASH Zero Latency cycle + * @arg FLASH_Latency_1: FLASH One Latency cycle + * @arg FLASH_Latency_2: FLASH Two Latency cycles + * @arg FLASH_Latency_3: FLASH Three Latency cycles + * @arg FLASH_Latency_4: FLASH Four Latency cycles + * @arg FLASH_Latency_5: FLASH Five Latency cycles + * @arg FLASH_Latency_6: FLASH Six Latency cycles + * @arg FLASH_Latency_7: FLASH Seven Latency cycles + * @arg FLASH_Latency_8: FLASH Eight Latency cycles + * @arg FLASH_Latency_9: FLASH Nine Latency cycles + * @arg FLASH_Latency_10: FLASH Teen Latency cycles + * @arg FLASH_Latency_11: FLASH Eleven Latency cycles + * @arg FLASH_Latency_12: FLASH Twelve Latency cycles + * @arg FLASH_Latency_13: FLASH Thirteen Latency cycles + * @arg FLASH_Latency_14: FLASH Fourteen Latency cycles + * @arg FLASH_Latency_15: FLASH Fifteen Latency cycles + * + * @note For STM32F405xx/407xx, STM32F415xx/417xx, STM32F401xx/411xE and STM32F412xG devices + * this parameter can be a value between FLASH_Latency_0 and FLASH_Latency_7. + * + * @note For STM32F42xxx/43xxx devices this parameter can be a value between + * FLASH_Latency_0 and FLASH_Latency_15. + * + * @retval None + */ +void FLASH_SetLatency(uint32_t FLASH_Latency) +{ + /* Check the parameters */ + assert_param(IS_FLASH_LATENCY(FLASH_Latency)); + + /* Perform Byte access to FLASH_ACR[8:0] to set the Latency value */ + *(__IO uint8_t *)ACR_BYTE0_ADDRESS = (uint8_t)FLASH_Latency; +} + +/** + * @brief Enables or disables the Prefetch Buffer. + * @param NewState: new state of the Prefetch Buffer. + * This parameter can be: ENABLE or DISABLE. + * @retval None + */ +void FLASH_PrefetchBufferCmd(FunctionalState NewState) +{ + /* Check the parameters */ + assert_param(IS_FUNCTIONAL_STATE(NewState)); + + /* Enable or disable the Prefetch Buffer */ + if(NewState != DISABLE) + { + FLASH->ACR |= FLASH_ACR_PRFTEN; + } + else + { + FLASH->ACR &= (~FLASH_ACR_PRFTEN); + } +} + +/** + * @brief Enables or disables the Instruction Cache feature. + * @param NewState: new state of the Instruction Cache. + * This parameter can be: ENABLE or DISABLE. + * @retval None + */ +void FLASH_InstructionCacheCmd(FunctionalState NewState) +{ + /* Check the parameters */ + assert_param(IS_FUNCTIONAL_STATE(NewState)); + + if(NewState != DISABLE) + { + FLASH->ACR |= FLASH_ACR_ICEN; + } + else + { + FLASH->ACR &= (~FLASH_ACR_ICEN); + } +} + +/** + * @brief Enables or disables the Data Cache feature. + * @param NewState: new state of the Data Cache. + * This parameter can be: ENABLE or DISABLE. + * @retval None + */ +void FLASH_DataCacheCmd(FunctionalState NewState) +{ + /* Check the parameters */ + assert_param(IS_FUNCTIONAL_STATE(NewState)); + + if(NewState != DISABLE) + { + FLASH->ACR |= FLASH_ACR_DCEN; + } + else + { + FLASH->ACR &= (~FLASH_ACR_DCEN); + } +} + +/** + * @brief Resets the Instruction Cache. + * @note This function must be used only when the Instruction Cache is disabled. + * @param None + * @retval None + */ +void FLASH_InstructionCacheReset(void) +{ + FLASH->ACR |= FLASH_ACR_ICRST; +} + +/** + * @brief Resets the Data Cache. + * @note This function must be used only when the Data Cache is disabled. + * @param None + * @retval None + */ +void FLASH_DataCacheReset(void) +{ + FLASH->ACR |= FLASH_ACR_DCRST; +} + +/** + * @} + */ + +/** @defgroup FLASH_Group2 FLASH Memory Programming functions + * @brief FLASH Memory Programming functions + * +@verbatim + =============================================================================== + ##### FLASH Memory Programming functions ##### + =============================================================================== + [..] + This group includes the following functions: + (+) void FLASH_Unlock(void) + (+) void FLASH_Lock(void) + (+) FLASH_Status FLASH_EraseSector(uint32_t FLASH_Sector, uint8_t VoltageRange) + (+) FLASH_Status FLASH_EraseAllSectors(uint8_t VoltageRange) + (+) FLASH_Status FLASH_ProgramDoubleWord(uint32_t Address, uint64_t Data) + (+) FLASH_Status FLASH_ProgramWord(uint32_t Address, uint32_t Data) + (+) FLASH_Status FLASH_ProgramHalfWord(uint32_t Address, uint16_t Data) + (+) FLASH_Status FLASH_ProgramByte(uint32_t Address, uint8_t Data) + The following functions can be used only for STM32F42xxx/43xxx devices. + (+) FLASH_Status FLASH_EraseAllBank1Sectors(uint8_t VoltageRange) + (+) FLASH_Status FLASH_EraseAllBank2Sectors(uint8_t VoltageRange) + [..] + Any operation of erase or program should follow these steps: + (#) Call the FLASH_Unlock() function to enable the FLASH control register access + + (#) Call the desired function to erase sector(s) or program data + + (#) Call the FLASH_Lock() function to disable the FLASH control register access + (recommended to protect the FLASH memory against possible unwanted operation) + +@endverbatim + * @{ + */ + +/** + * @brief Unlocks the FLASH control register access + * @param None + * @retval None + */ +void FLASH_Unlock(void) +{ + if((FLASH->CR & FLASH_CR_LOCK) != RESET) + { + /* Authorize the FLASH Registers access */ + FLASH->KEYR = FLASH_KEY1; + FLASH->KEYR = FLASH_KEY2; + } +} + +/** + * @brief Locks the FLASH control register access + * @param None + * @retval None + */ +void FLASH_Lock(void) +{ + /* Set the LOCK Bit to lock the FLASH Registers access */ + FLASH->CR |= FLASH_CR_LOCK; +} + +/** + * @brief Erases a specified FLASH Sector. + * + * @note If an erase and a program operations are requested simultaneously, + * the erase operation is performed before the program one. + * + * @param FLASH_Sector: The Sector number to be erased. + * + * @note For STM32F405xx/407xx and STM32F415xx/417xx devices this parameter can + * be a value between FLASH_Sector_0 and FLASH_Sector_11. + * + * For STM32F42xxx/43xxx devices this parameter can be a value between + * FLASH_Sector_0 and FLASH_Sector_23. + * + * For STM32F401xx devices this parameter can be a value between + * FLASH_Sector_0 and FLASH_Sector_5. + * + * For STM32F411xE and STM32F412xG devices this parameter can be a value between + * FLASH_Sector_0 and FLASH_Sector_7. + * + * For STM32F410xx devices this parameter can be a value between + * FLASH_Sector_0 and FLASH_Sector_4. + * + * @param VoltageRange: The device voltage range which defines the erase parallelism. + * This parameter can be one of the following values: + * @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V, + * the operation will be done by byte (8-bit) + * @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V, + * the operation will be done by half word (16-bit) + * @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V, + * the operation will be done by word (32-bit) + * @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp, + * the operation will be done by double word (64-bit) + * + * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2, + * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2. + */ +FLASH_Status FLASH_EraseSector(uint32_t FLASH_Sector, uint8_t VoltageRange) +{ + uint32_t tmp_psize = 0x0; + FLASH_Status status = FLASH_COMPLETE2; + + /* Check the parameters */ + assert_param(IS_FLASH_SECTOR(FLASH_Sector)); + assert_param(IS_VOLTAGERANGE(VoltageRange)); + + if(VoltageRange == VoltageRange_1) + { + tmp_psize = FLASH_PSIZE_BYTE; + } + else if(VoltageRange == VoltageRange_2) + { + tmp_psize = FLASH_PSIZE_HALF_WORD; + } + else if(VoltageRange == VoltageRange_3) + { + tmp_psize = FLASH_PSIZE_WORD; + } + else + { + tmp_psize = FLASH_PSIZE_DOUBLE_WORD; + } + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + if(status == FLASH_COMPLETE2) + { + /* if the previous operation is completed, proceed to erase the sector */ + FLASH->CR &= CR_PSIZE_MASK; + FLASH->CR |= tmp_psize; + FLASH->CR &= SECTOR_MASK; + FLASH->CR |= FLASH_CR_SER | FLASH_Sector; + FLASH->CR |= FLASH_CR_STRT; + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + /* if the erase operation is completed, disable the SER Bit */ + FLASH->CR &= (~FLASH_CR_SER); + FLASH->CR &= SECTOR_MASK; + } + /* Return the Erase Status */ + return status; +} + +/** + * @brief Erases all FLASH Sectors. + * + * @note If an erase and a program operations are requested simultaneously, + * the erase operation is performed before the program one. + * + * @param VoltageRange: The device voltage range which defines the erase parallelism. + * This parameter can be one of the following values: + * @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V, + * the operation will be done by byte (8-bit) + * @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V, + * the operation will be done by half word (16-bit) + * @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V, + * the operation will be done by word (32-bit) + * @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp, + * the operation will be done by double word (64-bit) + * + * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2, + * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2. + */ +FLASH_Status FLASH_EraseAllSectors(uint8_t VoltageRange) +{ + uint32_t tmp_psize = 0x0; + FLASH_Status status = FLASH_COMPLETE2; + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + assert_param(IS_VOLTAGERANGE(VoltageRange)); + + if(VoltageRange == VoltageRange_1) + { + tmp_psize = FLASH_PSIZE_BYTE; + } + else if(VoltageRange == VoltageRange_2) + { + tmp_psize = FLASH_PSIZE_HALF_WORD; + } + else if(VoltageRange == VoltageRange_3) + { + tmp_psize = FLASH_PSIZE_WORD; + } + else + { + tmp_psize = FLASH_PSIZE_DOUBLE_WORD; + } + if(status == FLASH_COMPLETE2) + { + /* if the previous operation is completed, proceed to erase all sectors */ +#if defined(STM32F427_437xx) || defined(STM32F429_439xx) || defined(STM32F469_479xx) + FLASH->CR &= CR_PSIZE_MASK; + FLASH->CR |= tmp_psize; + FLASH->CR |= (FLASH_CR_MER1 | FLASH_CR_MER2); + FLASH->CR |= FLASH_CR_STRT; + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + /* if the erase operation is completed, disable the MER Bit */ + FLASH->CR &= ~(FLASH_CR_MER1 | FLASH_CR_MER2); +#endif /* STM32F427_437xx || STM32F429_439xx || STM32F469_479xx */ + +#if defined(STM32F40_41xxx) || defined(STM32F401xx) || defined(STM32F410xx) || defined(STM32F411xE) || defined(STM32F412xG) || defined(STM32F446xx) + FLASH->CR &= CR_PSIZE_MASK; + FLASH->CR |= tmp_psize; + FLASH->CR |= FLASH_CR_MER; + FLASH->CR |= FLASH_CR_STRT; + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + /* if the erase operation is completed, disable the MER Bit */ + FLASH->CR &= (~FLASH_CR_MER); +#endif /* STM32F40_41xxx || STM32F401xx || STM32F410xx || STM32F411xE || STM32F412xG || STM32F446xx */ + + } + /* Return the Erase Status */ + return status; +} + +/** + * @brief Erases all FLASH Sectors in Bank 1. + * + * @note This function can be used only for STM32F42xxx/43xxx devices. + * + * @note If an erase and a program operations are requested simultaneously, + * the erase operation is performed before the program one. + * + * @param VoltageRange: The device voltage range which defines the erase parallelism. + * This parameter can be one of the following values: + * @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V, + * the operation will be done by byte (8-bit) + * @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V, + * the operation will be done by half word (16-bit) + * @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V, + * the operation will be done by word (32-bit) + * @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp, + * the operation will be done by double word (64-bit) + * + * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2, + * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2. + */ +FLASH_Status FLASH_EraseAllBank1Sectors(uint8_t VoltageRange) +{ + uint32_t tmp_psize = 0x0; + FLASH_Status status = FLASH_COMPLETE2; + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + assert_param(IS_VOLTAGERANGE(VoltageRange)); + + if(VoltageRange == VoltageRange_1) + { + tmp_psize = FLASH_PSIZE_BYTE; + } + else if(VoltageRange == VoltageRange_2) + { + tmp_psize = FLASH_PSIZE_HALF_WORD; + } + else if(VoltageRange == VoltageRange_3) + { + tmp_psize = FLASH_PSIZE_WORD; + } + else + { + tmp_psize = FLASH_PSIZE_DOUBLE_WORD; + } + if(status == FLASH_COMPLETE2) + { + /* if the previous operation is completed, proceed to erase all sectors */ + FLASH->CR &= CR_PSIZE_MASK; + FLASH->CR |= tmp_psize; + FLASH->CR |= FLASH_CR_MER1; + FLASH->CR |= FLASH_CR_STRT; + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + /* if the erase operation is completed, disable the MER Bit */ + FLASH->CR &= (~FLASH_CR_MER1); + + } + /* Return the Erase Status */ + return status; +} + + +/** + * @brief Erases all FLASH Sectors in Bank 2. + * + * @note This function can be used only for STM32F42xxx/43xxx devices. + * + * @note If an erase and a program operations are requested simultaneously, + * the erase operation is performed before the program one. + * + * @param VoltageRange: The device voltage range which defines the erase parallelism. + * This parameter can be one of the following values: + * @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V, + * the operation will be done by byte (8-bit) + * @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V, + * the operation will be done by half word (16-bit) + * @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V, + * the operation will be done by word (32-bit) + * @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp, + * the operation will be done by double word (64-bit) + * + * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2, + * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2. + */ +FLASH_Status FLASH_EraseAllBank2Sectors(uint8_t VoltageRange) +{ + uint32_t tmp_psize = 0x0; + FLASH_Status status = FLASH_COMPLETE2; + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + assert_param(IS_VOLTAGERANGE(VoltageRange)); + + if(VoltageRange == VoltageRange_1) + { + tmp_psize = FLASH_PSIZE_BYTE; + } + else if(VoltageRange == VoltageRange_2) + { + tmp_psize = FLASH_PSIZE_HALF_WORD; + } + else if(VoltageRange == VoltageRange_3) + { + tmp_psize = FLASH_PSIZE_WORD; + } + else + { + tmp_psize = FLASH_PSIZE_DOUBLE_WORD; + } + if(status == FLASH_COMPLETE2) + { + /* if the previous operation is completed, proceed to erase all sectors */ + FLASH->CR &= CR_PSIZE_MASK; + FLASH->CR |= tmp_psize; + FLASH->CR |= FLASH_CR_MER2; + FLASH->CR |= FLASH_CR_STRT; + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + /* if the erase operation is completed, disable the MER Bit */ + FLASH->CR &= (~FLASH_CR_MER2); + + } + /* Return the Erase Status */ + return status; +} + +/** + * @brief Programs a double word (64-bit) at a specified address. + * @note This function must be used when the device voltage range is from + * 2.7V to 3.6V and an External Vpp is present. + * + * @note If an erase and a program operations are requested simultaneously, + * the erase operation is performed before the program one. + * + * @param Address: specifies the address to be programmed. + * @param Data: specifies the data to be programmed. + * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2, + * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2. + */ +FLASH_Status FLASH_ProgramDoubleWord(uint32_t Address, uint64_t Data) +{ + FLASH_Status status = FLASH_COMPLETE2; + + /* Check the parameters */ + assert_param(IS_FLASH_ADDRESS(Address)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + if(status == FLASH_COMPLETE2) + { + /* if the previous operation is completed, proceed to program the new data */ + FLASH->CR &= CR_PSIZE_MASK; + FLASH->CR |= FLASH_PSIZE_DOUBLE_WORD; + FLASH->CR |= FLASH_CR_PG; + + *(__IO uint64_t*)Address = Data; + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + /* if the program operation is completed, disable the PG Bit */ + FLASH->CR &= (~FLASH_CR_PG); + } + /* Return the Program Status */ + return status; +} + +/** + * @brief Programs a word (32-bit) at a specified address. + * + * @note This function must be used when the device voltage range is from 2.7V to 3.6V. + * + * @note If an erase and a program operations are requested simultaneously, + * the erase operation is performed before the program one. + * + * @param Address: specifies the address to be programmed. + * This parameter can be any address in Program memory zone or in OTP zone. + * @param Data: specifies the data to be programmed. + * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2, + * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2. + */ +FLASH_Status FLASH_ProgramWord(uint32_t Address, uint32_t Data) +{ + FLASH_Status status = FLASH_COMPLETE2; + + /* Check the parameters */ + assert_param(IS_FLASH_ADDRESS(Address)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + if(status == FLASH_COMPLETE2) + { + /* if the previous operation is completed, proceed to program the new data */ + FLASH->CR &= CR_PSIZE_MASK; + FLASH->CR |= FLASH_PSIZE_WORD; + FLASH->CR |= FLASH_CR_PG; + + *(__IO uint32_t*)Address = Data; + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + /* if the program operation is completed, disable the PG Bit */ + FLASH->CR &= (~FLASH_CR_PG); + } + /* Return the Program Status */ + return status; +} + +/** + * @brief Programs a half word (16-bit) at a specified address. + * @note This function must be used when the device voltage range is from 2.1V to 3.6V. + * + * @note If an erase and a program operations are requested simultaneously, + * the erase operation is performed before the program one. + * + * @param Address: specifies the address to be programmed. + * This parameter can be any address in Program memory zone or in OTP zone. + * @param Data: specifies the data to be programmed. + * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2, + * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2. + */ +FLASH_Status FLASH_ProgramHalfWord(uint32_t Address, uint16_t Data) +{ + FLASH_Status status = FLASH_COMPLETE2; + + /* Check the parameters */ + assert_param(IS_FLASH_ADDRESS(Address)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + if(status == FLASH_COMPLETE2) + { + /* if the previous operation is completed, proceed to program the new data */ + FLASH->CR &= CR_PSIZE_MASK; + FLASH->CR |= FLASH_PSIZE_HALF_WORD; + FLASH->CR |= FLASH_CR_PG; + + *(__IO uint16_t*)Address = Data; + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + /* if the program operation is completed, disable the PG Bit */ + FLASH->CR &= (~FLASH_CR_PG); + } + /* Return the Program Status */ + return status; +} + +/** + * @brief Programs a byte (8-bit) at a specified address. + * @note This function can be used within all the device supply voltage ranges. + * + * @note If an erase and a program operations are requested simultaneously, + * the erase operation is performed before the program one. + * + * @param Address: specifies the address to be programmed. + * This parameter can be any address in Program memory zone or in OTP zone. + * @param Data: specifies the data to be programmed. + * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2, + * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2. + */ +FLASH_Status FLASH_ProgramByte(uint32_t Address, uint8_t Data) +{ + FLASH_Status status = FLASH_COMPLETE2; + + /* Check the parameters */ + assert_param(IS_FLASH_ADDRESS(Address)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + if(status == FLASH_COMPLETE2) + { + /* if the previous operation is completed, proceed to program the new data */ + FLASH->CR &= CR_PSIZE_MASK; + FLASH->CR |= FLASH_PSIZE_BYTE; + FLASH->CR |= FLASH_CR_PG; + + *(__IO uint8_t*)Address = Data; + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + /* if the program operation is completed, disable the PG Bit */ + FLASH->CR &= (~FLASH_CR_PG); + } + + /* Return the Program Status */ + return status; +} + +/** + * @} + */ + +/** @defgroup FLASH_Group3 Option Bytes Programming functions + * @brief Option Bytes Programming functions + * +@verbatim + =============================================================================== + ##### Option Bytes Programming functions ##### + =============================================================================== + [..] + This group includes the following functions: + (+) void FLASH_OB_Unlock(void) + (+) void FLASH_OB_Lock(void) + (+) void FLASH_OB_WRPConfig(uint32_t OB_WRP, FunctionalState NewState) + (+) void FLASH_OB_WRP1Config(uint32_t OB_WRP, FunctionalState NewState) + (+) void FLASH_OB_PCROPSelectionConfig(uint8_t OB_PCROPSelect) + (+) void FLASH_OB_PCROPConfig(uint32_t OB_PCROP, FunctionalState NewState) + (+) void FLASH_OB_PCROP1Config(uint32_t OB_PCROP, FunctionalState NewState) + (+) void FLASH_OB_RDPConfig(uint8_t OB_RDP) + (+) void FLASH_OB_UserConfig(uint8_t OB_IWDG, uint8_t OB_STOP, uint8_t OB_STDBY) + (+) void FLASH_OB_BORConfig(uint8_t OB_BOR) + (+) FLASH_Status FLASH_ProgramOTP(uint32_t Address, uint32_t Data) + (+) FLASH_Status FLASH_OB_Launch(void) + (+) uint32_t FLASH_OB_GetUser(void) + (+) uint8_t FLASH_OB_GetWRP(void) + (+) uint8_t FLASH_OB_GetWRP1(void) + (+) uint8_t FLASH_OB_GetPCROP(void) + (+) uint8_t FLASH_OB_GetPCROP1(void) + (+) uint8_t FLASH_OB_GetRDP(void) + (+) uint8_t FLASH_OB_GetBOR(void) + [..] + The following function can be used only for STM32F42xxx/43xxx devices. + (+) void FLASH_OB_BootConfig(uint8_t OB_BOOT) + [..] + Any operation of erase or program should follow these steps: + (#) Call the FLASH_OB_Unlock() function to enable the FLASH option control + register access + + (#) Call one or several functions to program the desired Option Bytes: + (++) void FLASH_OB_WRPConfig(uint32_t OB_WRP, FunctionalState NewState) + => to Enable/Disable the desired sector write protection + (++) void FLASH_OB_RDPConfig(uint8_t OB_RDP) => to set the desired read + Protection Level + (++) void FLASH_OB_UserConfig(uint8_t OB_IWDG, uint8_t OB_STOP, uint8_t OB_STDBY) + => to configure the user Option Bytes. + (++) void FLASH_OB_BORConfig(uint8_t OB_BOR) => to set the BOR Level + + (#) Once all needed Option Bytes to be programmed are correctly written, + call the FLASH_OB_Launch() function to launch the Option Bytes + programming process. + + -@- When changing the IWDG mode from HW to SW or from SW to HW, a system + reset is needed to make the change effective. + + (#) Call the FLASH_OB_Lock() function to disable the FLASH option control + register access (recommended to protect the Option Bytes against + possible unwanted operations) + +@endverbatim + * @{ + */ + +/** + * @brief Unlocks the FLASH Option Control Registers access. + * @param None + * @retval None + */ +void FLASH_OB_Unlock(void) +{ + if((FLASH->OPTCR & FLASH_OPTCR_OPTLOCK) != RESET) + { + /* Authorizes the Option Byte register programming */ + FLASH->OPTKEYR = FLASH_OPT_KEY1; + FLASH->OPTKEYR = FLASH_OPT_KEY2; + } +} + +/** + * @brief Locks the FLASH Option Control Registers access. + * @param None + * @retval None + */ +void FLASH_OB_Lock(void) +{ + /* Set the OPTLOCK Bit to lock the FLASH Option Byte Registers access */ + FLASH->OPTCR |= FLASH_OPTCR_OPTLOCK; +} + +/** + * @brief Enables or disables the write protection of the desired sectors, for the first + * 1 Mb of the Flash + * + * @note When the memory read protection level is selected (RDP level = 1), + * it is not possible to program or erase the flash sector i if CortexM4 + * debug features are connected or boot code is executed in RAM, even if nWRPi = 1 + * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1). + * + * @param OB_WRP: specifies the sector(s) to be write protected or unprotected. + * This parameter can be one of the following values: + * @arg OB_WRP: A value between OB_WRP_Sector0 and OB_WRP_Sector11 + * @arg OB_WRP_Sector_All + * @param Newstate: new state of the Write Protection. + * This parameter can be: ENABLE or DISABLE. + * @retval None + */ +void FLASH_OB_WRPConfig(uint32_t OB_WRP, FunctionalState NewState) +{ + FLASH_Status status = FLASH_COMPLETE2; + + /* Check the parameters */ + assert_param(IS_OB_WRP(OB_WRP)); + assert_param(IS_FUNCTIONAL_STATE(NewState)); + + status = FLASH_WaitForLastOperation2(); + + if(status == FLASH_COMPLETE2) + { + if(NewState != DISABLE) + { + *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~OB_WRP); + } + else + { + *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)OB_WRP; + } + } +} + +/** + * @brief Enables or disables the write protection of the desired sectors, for the second + * 1 Mb of the Flash + * + * @note This function can be used only for STM32F42xxx/43xxx devices. + * + * @note When the memory read out protection is selected (RDP level = 1), + * it is not possible to program or erase the flash sector i if CortexM4 + * debug features are connected or boot code is executed in RAM, even if nWRPi = 1 + * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1). + * + * @param OB_WRP: specifies the sector(s) to be write protected or unprotected. + * This parameter can be one of the following values: + * @arg OB_WRP: A value between OB_WRP_Sector12 and OB_WRP_Sector23 + * @arg OB_WRP_Sector_All + * @param Newstate: new state of the Write Protection. + * This parameter can be: ENABLE or DISABLE. + * @retval None + */ +void FLASH_OB_WRP1Config(uint32_t OB_WRP, FunctionalState NewState) +{ + FLASH_Status status = FLASH_COMPLETE2; + + /* Check the parameters */ + assert_param(IS_OB_WRP(OB_WRP)); + assert_param(IS_FUNCTIONAL_STATE(NewState)); + + status = FLASH_WaitForLastOperation2(); + + if(status == FLASH_COMPLETE2) + { + if(NewState != DISABLE) + { + *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~OB_WRP); + } + else + { + *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)OB_WRP; + } + } +} + +/** + * @brief Select the Protection Mode (SPRMOD). + * + * @note This function can be used only for STM32F42xxx/43xxx and STM32F401xx/411xE devices. + * + * @note After PCROP activation, Option Byte modification is not possible. + * Exception made for the global Read Out Protection modification level (level1 to level0) + * @note Once SPRMOD bit is active unprotection of a protected sector is not possible + * + * @note Read a protected sector will set RDERR Flag and write a protected sector will set WRPERR Flag + * + * @note Some Precautions should be taken when activating the PCROP feature : + * The active value of nWRPi bits is inverted when PCROP mode is active, this means if SPRMOD = 1 + * and WRPi = 1 (default value), then the user sector i is read/write protected. + * In order to avoid activation of PCROP Mode for undesired sectors, please follow the + * below safety sequence : + * - Disable PCROP for all Sectors using FLASH_OB_PCROPConfig(OB_PCROP_Sector_All, DISABLE) function + * for Bank1 or FLASH_OB_PCROP1Config(OB_PCROP_Sector_All, DISABLE) function for Bank2 + * - Enable PCROP for the desired Sector i using FLASH_OB_PCROPConfig(Sector i, ENABLE) function + * - Activate the PCROP Mode FLASH_OB_PCROPSelectionConfig() function. + * + * @param OB_PCROP: Select the Protection Mode of nWPRi bits + * This parameter can be one of the following values: + * @arg OB_PcROP_Disable: nWRPi control the write protection of respective user sectors. + * @arg OB_PcROP_Enable: nWRPi control the read&write protection (PCROP) of respective user sectors. + * @retval None + */ +void FLASH_OB_PCROPSelectionConfig(uint8_t OB_PcROP) +{ + uint8_t optiontmp = 0xFF; + + /* Check the parameters */ + assert_param(IS_OB_PCROP_SELECT(OB_PcROP)); + + /* Mask SPRMOD bit */ + optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE3_ADDRESS) & (uint8_t)0x7F); + /* Update Option Byte */ + *(__IO uint8_t *)OPTCR_BYTE3_ADDRESS = (uint8_t)(OB_PcROP | optiontmp); + +} + +/** + * @brief Enables or disables the read/write protection (PCROP) of the desired + * sectors, for the first 1 MB of the Flash. + * + * @note This function can be used only for STM32F42xxx/43xxx , STM32F401xx/411xE + * and STM32F412xG devices. + * + * @param OB_PCROP: specifies the sector(s) to be read/write protected or unprotected. + * This parameter can be one of the following values: + * @arg OB_PCROP: A value between OB_PCROP_Sector0 and OB_PCROP_Sector11 for + * STM32F42xxx/43xxx devices and between OB_PCROP_Sector0 and + * OB_PCROP_Sector5 for STM32F401xx/411xE devices. + * @arg OB_PCROP_Sector_All + * @param Newstate: new state of the Write Protection. + * This parameter can be: ENABLE or DISABLE. + * @retval None + */ +void FLASH_OB_PCROPConfig(uint32_t OB_PCROP, FunctionalState NewState) +{ + FLASH_Status status = FLASH_COMPLETE2; + + /* Check the parameters */ + assert_param(IS_OB_PCROP(OB_PCROP)); + assert_param(IS_FUNCTIONAL_STATE(NewState)); + + status = FLASH_WaitForLastOperation2(); + + if(status == FLASH_COMPLETE2) + { + if(NewState != DISABLE) + { + *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)OB_PCROP; + } + else + { + *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~OB_PCROP); + } + } +} + +/** + * @brief Enables or disables the read/write protection (PCROP) of the desired + * sectors + * + * @note This function can be used only for STM32F42xxx/43xxx devices. + * + * @param OB_PCROP: specifies the sector(s) to be read/write protected or unprotected. + * This parameter can be one of the following values: + * @arg OB_PCROP: A value between OB_PCROP_Sector12 and OB_PCROP_Sector23 + * @arg OB_PCROP_Sector_All + * @param Newstate: new state of the Write Protection. + * This parameter can be: ENABLE or DISABLE. + * @retval None + */ +void FLASH_OB_PCROP1Config(uint32_t OB_PCROP, FunctionalState NewState) +{ + FLASH_Status status = FLASH_COMPLETE2; + + /* Check the parameters */ + assert_param(IS_OB_PCROP(OB_PCROP)); + assert_param(IS_FUNCTIONAL_STATE(NewState)); + + status = FLASH_WaitForLastOperation2(); + + if(status == FLASH_COMPLETE2) + { + if(NewState != DISABLE) + { + *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)OB_PCROP; + } + else + { + *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~OB_PCROP); + } + } +} + + +/** + * @brief Sets the read protection level. + * @param OB_RDP: specifies the read protection level. + * This parameter can be one of the following values: + * @arg OB_RDP_Level_0: No protection + * @arg OB_RDP_Level_1: Read protection of the memory + * @arg OB_RDP_Level_2: Full chip protection + * + * /!\ Warning /!\ When enabling OB_RDP level 2 it's no more possible to go back to level 1 or 0 + * + * @retval None + */ +void FLASH_OB_RDPConfig(uint8_t OB_RDP) +{ + FLASH_Status status = FLASH_COMPLETE2; + + /* Check the parameters */ + assert_param(IS_OB_RDP(OB_RDP)); + + status = FLASH_WaitForLastOperation2(); + + if(status == FLASH_COMPLETE2) + { + *(__IO uint8_t*)OPTCR_BYTE1_ADDRESS = OB_RDP; + + } +} + +/** + * @brief Programs the FLASH User Option Byte: IWDG_SW / RST_STOP / RST_STDBY. + * @param OB_IWDG: Selects the IWDG mode + * This parameter can be one of the following values: + * @arg OB_IWDG_SW: Software IWDG selected + * @arg OB_IWDG_HW: Hardware IWDG selected + * @param OB_STOP: Reset event when entering STOP mode. + * This parameter can be one of the following values: + * @arg OB_STOP_NoRST: No reset generated when entering in STOP + * @arg OB_STOP_RST: Reset generated when entering in STOP + * @param OB_STDBY: Reset event when entering Standby mode. + * This parameter can be one of the following values: + * @arg OB_STDBY_NoRST: No reset generated when entering in STANDBY + * @arg OB_STDBY_RST: Reset generated when entering in STANDBY + * @retval None + */ +void FLASH_OB_UserConfig(uint8_t OB_IWDG, uint8_t OB_STOP, uint8_t OB_STDBY) +{ + uint8_t optiontmp = 0xFF; + FLASH_Status status = FLASH_COMPLETE2; + + /* Check the parameters */ + assert_param(IS_OB_IWDG_SOURCE(OB_IWDG)); + assert_param(IS_OB_STOP_SOURCE(OB_STOP)); + assert_param(IS_OB_STDBY_SOURCE(OB_STDBY)); + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + if(status == FLASH_COMPLETE2) + { +#if defined(STM32F427_437xx) || defined(STM32F429_439xx) || defined(STM32F469_479xx) + /* Mask OPTLOCK, OPTSTRT, BOR_LEV and BFB2 bits */ + optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE0_ADDRESS) & (uint8_t)0x1F); +#endif /* STM32F427_437xx || STM32F429_439xx || STM32F469_479xx */ + +#if defined(STM32F40_41xxx) || defined(STM32F401xx) || defined(STM32F410xx) || defined(STM32F411xE) || defined(STM32F446xx) + /* Mask OPTLOCK, OPTSTRT and BOR_LEV bits */ + optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE0_ADDRESS) & (uint8_t)0x0F); +#endif /* STM32F40_41xxx || STM32F401xx || STM32F410xx || STM32F411xE || STM32F446xx */ + + /* Update User Option Byte */ + *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS = OB_IWDG | (uint8_t)(OB_STDBY | (uint8_t)(OB_STOP | ((uint8_t)optiontmp))); + } +} + +/** + * @brief Configure the Dual Bank Boot. + * + * @note This function can be used only for STM32F42xxx/43xxx devices. + * + * @param OB_BOOT: specifies the Dual Bank Boot Option byte. + * This parameter can be one of the following values: + * @arg OB_Dual_BootEnabled: Dual Bank Boot Enable + * @arg OB_Dual_BootDisabled: Dual Bank Boot Disabled + * @retval None + */ +void FLASH_OB_BootConfig(uint8_t OB_BOOT) +{ + /* Check the parameters */ + assert_param(IS_OB_BOOT(OB_BOOT)); + + /* Set Dual Bank Boot */ + *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BFB2); + *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= OB_BOOT; + +} + +/** + * @brief Sets the BOR Level. + * @param OB_BOR: specifies the Option Bytes BOR Reset Level. + * This parameter can be one of the following values: + * @arg OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V + * @arg OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V + * @arg OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V + * @arg OB_BOR_OFF: Supply voltage ranges from 1.62 to 2.1 V + * @retval None + */ +void FLASH_OB_BORConfig(uint8_t OB_BOR) +{ + /* Check the parameters */ + assert_param(IS_OB_BOR(OB_BOR)); + + /* Set the BOR Level */ + *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BOR_LEV); + *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= OB_BOR; + +} + +/** + * @brief Launch the option byte loading. + * @param None + * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2, + * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2. + */ +FLASH_Status FLASH_OB_Launch(void) +{ + FLASH_Status status = FLASH_COMPLETE2; + + /* Set the OPTSTRT bit in OPTCR register */ + *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= FLASH_OPTCR_OPTSTRT; + + /* Wait for last operation to be completed */ + status = FLASH_WaitForLastOperation2(); + + return status; +} + +/** + * @brief Returns the FLASH User Option Bytes values. + * @param None + * @retval The FLASH User Option Bytes values: IWDG_SW(Bit0), RST_STOP(Bit1) + * and RST_STDBY(Bit2). + */ +uint8_t FLASH_OB_GetUser(void) +{ + /* Return the User Option Byte */ + return (uint8_t)(FLASH->OPTCR >> 5); +} + +/** + * @brief Returns the FLASH Write Protection Option Bytes value. + * @param None + * @retval The FLASH Write Protection Option Bytes value + */ +uint16_t FLASH_OB_GetWRP(void) +{ + /* Return the FLASH write protection Register value */ + return (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS)); +} + +/** + * @brief Returns the FLASH Write Protection Option Bytes value. + * + * @note This function can be used only for STM32F42xxx/43xxx devices. + * + * @param None + * @retval The FLASH Write Protection Option Bytes value + */ +uint16_t FLASH_OB_GetWRP1(void) +{ + /* Return the FLASH write protection Register value */ + return (*(__IO uint16_t *)(OPTCR1_BYTE2_ADDRESS)); +} + +/** + * @brief Returns the FLASH PC Read/Write Protection Option Bytes value. + * + * @note This function can be used only for STM32F42xxx/43xxx devices and STM32F401xx/411xE devices. + * + * @param None + * @retval The FLASH PC Read/Write Protection Option Bytes value + */ +uint16_t FLASH_OB_GetPCROP(void) +{ + /* Return the FLASH PC Read/write protection Register value */ + return (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS)); +} + +/** + * @brief Returns the FLASH PC Read/Write Protection Option Bytes value. + * + * @note This function can be used only for STM32F42xxx/43xxx devices. + * + * @param None + * @retval The FLASH PC Read/Write Protection Option Bytes value + */ +uint16_t FLASH_OB_GetPCROP1(void) +{ + /* Return the FLASH write protection Register value */ + return (*(__IO uint16_t *)(OPTCR1_BYTE2_ADDRESS)); +} + +/** + * @brief Returns the FLASH Read Protection level. + * @param None + * @retval FLASH ReadOut Protection Status: + * - SET, when OB_RDP_Level_1 or OB_RDP_Level_2 is set + * - RESET, when OB_RDP_Level_0 is set + */ +FlagStatus FLASH_OB_GetRDP(void) +{ + FlagStatus readstatus = RESET; + + if ((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS) != (uint8_t)OB_RDP_Level_0)) + { + readstatus = SET; + } + else + { + readstatus = RESET; + } + return readstatus; +} + +/** + * @brief Returns the FLASH BOR level. + * @param None + * @retval The FLASH BOR level: + * - OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V + * - OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V + * - OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V + * - OB_BOR_OFF : Supply voltage ranges from 1.62 to 2.1 V + */ +uint8_t FLASH_OB_GetBOR(void) +{ + /* Return the FLASH BOR level */ + return (uint8_t)(*(__IO uint8_t *)(OPTCR_BYTE0_ADDRESS) & (uint8_t)0x0C); +} + +/** + * @} + */ + +/** @defgroup FLASH_Group4 Interrupts and flags management functions + * @brief Interrupts and flags management functions + * +@verbatim + =============================================================================== + ##### Interrupts and flags management functions ##### + =============================================================================== +@endverbatim + * @{ + */ + +/** + * @brief Enables or disables the specified FLASH interrupts. + * @param FLASH_IT: specifies the FLASH interrupt sources to be enabled or disabled. + * This parameter can be any combination of the following values: + * @arg FLASH_IT_ERR: FLASH Error Interrupt + * @arg FLASH_IT_EOP: FLASH end of operation Interrupt + * @retval None + */ +void FLASH_ITConfig(uint32_t FLASH_IT, FunctionalState NewState) +{ + /* Check the parameters */ + assert_param(IS_FLASH_IT(FLASH_IT)); + assert_param(IS_FUNCTIONAL_STATE(NewState)); + + if(NewState != DISABLE) + { + /* Enable the interrupt sources */ + FLASH->CR |= FLASH_IT; + } + else + { + /* Disable the interrupt sources */ + FLASH->CR &= ~(uint32_t)FLASH_IT; + } +} + +/** + * @brief Checks whether the specified FLASH flag is set or not. + * @param FLASH_FLAG: specifies the FLASH flag to check. + * This parameter can be one of the following values: + * @arg FLASH_FLAG_EOP: FLASH End of Operation flag + * @arg FLASH_FLAG_OPERR: FLASH operation Error flag + * @arg FLASH_FLAG_WRPERR: FLASH Write protected error flag + * @arg FLASH_FLAG_PGAERR: FLASH Programming Alignment error flag + * @arg FLASH_FLAG_PGPERR: FLASH Programming Parallelism error flag + * @arg FLASH_FLAG_PGSERR: FLASH Programming Sequence error flag + * @arg FLASH_FLAG_RDERR: FLASH (PCROP) Read Protection error flag (STM32F42xx/43xxx and STM32F401xx/411xE devices) + * @arg FLASH_FLAG_BSY: FLASH Busy flag + * @retval The new state of FLASH_FLAG (SET or RESET). + */ +FlagStatus FLASH_GetFlagStatus(uint32_t FLASH_FLAG) +{ + FlagStatus bitstatus = RESET; + /* Check the parameters */ + assert_param(IS_FLASH_GET_FLAG(FLASH_FLAG)); + + if((FLASH->SR & FLASH_FLAG) != (uint32_t)RESET) + { + bitstatus = SET; + } + else + { + bitstatus = RESET; + } + /* Return the new state of FLASH_FLAG (SET or RESET) */ + return bitstatus; +} + +/** + * @brief Clears the FLASH's pending flags. + * @param FLASH_FLAG: specifies the FLASH flags to clear. + * This parameter can be any combination of the following values: + * @arg FLASH_FLAG_EOP: FLASH End of Operation flag + * @arg FLASH_FLAG_OPERR: FLASH operation Error flag + * @arg FLASH_FLAG_WRPERR: FLASH Write protected error flag + * @arg FLASH_FLAG_PGAERR: FLASH Programming Alignment error flag + * @arg FLASH_FLAG_PGPERR: FLASH Programming Parallelism error flag + * @arg FLASH_FLAG_PGSERR: FLASH Programming Sequence error flag + * @arg FLASH_FLAG_RDERR: FLASH Read Protection error flag (STM32F42xx/43xxx and STM32F401xx/411xE devices) + * @retval None + */ +void FLASH_ClearFlag(uint32_t FLASH_FLAG) +{ + /* Check the parameters */ + assert_param(IS_FLASH_CLEAR_FLAG(FLASH_FLAG)); + + /* Clear the flags */ + FLASH->SR = FLASH_FLAG; +} + +/** + * @brief Returns the FLASH Status. + * @param None + * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2, + * FLASH_ERROR_WRP2, FLASH_ERROR_RD2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2. + */ +FLASH_Status FLASH_GetStatus(void) +{ + FLASH_Status flashstatus = FLASH_COMPLETE2; + + if((FLASH->SR & FLASH_FLAG_BSY) == FLASH_FLAG_BSY) + { + flashstatus = FLASH_BUSY2; + } + else + { + if((FLASH->SR & FLASH_FLAG_WRPERR) != (uint32_t)0x00) + { + flashstatus = FLASH_ERROR_WRP2; + } + else + { + if((FLASH->SR & FLASH_FLAG_RDERR) != (uint32_t)0x00) + { + flashstatus = FLASH_ERROR_RD2; + } + else + { + if((FLASH->SR & (uint32_t)0xE0) != (uint32_t)0x00) + { + flashstatus = FLASH_ERROR_PROGRAM2; + } + else + { + if((FLASH->SR & FLASH_FLAG_OPERR) != (uint32_t)0x00) + { + flashstatus = FLASH_ERROR_OPERATION2; + } + else + { + flashstatus = FLASH_COMPLETE2; + } + } + } + } + } + /* Return the FLASH Status */ + return flashstatus; +} + +/** + * @brief Waits for a FLASH operation to complete. + * @param None + * @retval FLASH Status: The returned value can be: FLASH_BUSY2, FLASH_ERROR_PROGRAM2, + * FLASH_ERROR_WRP2, FLASH_ERROR_OPERATION2 or FLASH_COMPLETE2. + */ +FLASH_Status FLASH_WaitForLastOperation2(void) +{ + __IO FLASH_Status status = FLASH_COMPLETE2; + + /* Check for the FLASH Status */ + status = FLASH_GetStatus(); + + /* Wait for the FLASH operation to complete by polling on BUSY flag to be reset. + Even if the FLASH operation fails, the BUSY flag will be reset and an error + flag will be set */ + while(status == FLASH_BUSY2) + { + status = FLASH_GetStatus(); + } + /* Return the operation status */ + return status; +} + +/** + * @} + */ + +/** + * @} + */ + +/** + * @} + */ + +/** + * @} + */ + +/************************ (C) COPYRIGHT STMicroelectronics *****END OF FILE****/ \ No newline at end of file