File content as of revision 0:23f5942ba14e:

#include "mbed.h"
#include "stm32f4xx_hal_flash.h"

namespace {
    //STM32F411.C/E(DM00119316.pdf p.43 Table 4)
    const uint32_t   ADDR_FLASH_SECTOR_0 = (uint32_t)0x08000000;     /* Base address of Sector 0,  16 Kbytes  */
    const uint32_t   ADDR_FLASH_SECTOR_1 = (uint32_t)0x08004000;     /* Base address of Sector 1,  16 Kbytes  */
    const uint32_t   ADDR_FLASH_SECTOR_2 = (uint32_t)0x08008000;     /* Base address of Sector 2,  16 Kbytes  */
    const uint32_t   ADDR_FLASH_SECTOR_3 = (uint32_t)0x0800c000;     /* Base address of Sector 3,  16 Kbytes  */
    const uint32_t   ADDR_FLASH_SECTOR_4 = (uint32_t)0x08010000;     /* Base address of Sector 4,  64 Kbytes  */
    const uint32_t   ADDR_FLASH_SECTOR_5 = (uint32_t)0x08020000;     /* Base address of Sector 5, 128 Kbytes  */
    const uint32_t   ADDR_FLASH_SECTOR_6 = (uint32_t)0x08040000;     /* Base address of Sector 6, 128 Kbytes  */
    const uint32_t   ADDR_FLASH_SECTOR_7 = (uint32_t)0x08060000;     /* Base address of Sector 7, 128 Kbytes  */

    /** @brief  内蔵FLASHへのbyte書込み(セクタ消去有り)
     *
     * @param[in]   addr    書込み先アドレス(ADDR_FLASH_SECTOR_x)
     * @param[in]   pData   書き込みデータ
     * @param[in]   Len     書き込みデータサイズ
     */
    void programByte(uint32_t addr, const uint8_t *pData, uint8_t Len)
    {
        HAL_StatusTypeDef ret;
    
        /* flash control registerへのアクセス許可 */
        HAL_FLASH_Unlock();
    
        /* 消去(電圧 [2.7V to 3.6V]) */
        FLASH_Erase_Sector(addr, FLASH_VOLTAGE_RANGE_3);
    
        /* 書込み(4byte単位) */
        for (int lp = 0 ; lp < Len; lp ++) {
            ret = HAL_FLASH_Program(FLASH_TYPEPROGRAM_BYTE, addr, *pData);
            if (ret != HAL_OK) {
                //trouble!!
                while (true) {}
            }
            addr++;
            pData++;
        }
    
        /* flash control registerへのアクセス禁止 */
        HAL_FLASH_Lock();
    }
}



int main()
{
    uint8_t str[] = "Hello.";
    
    programByte(ADDR_FLASH_SECTOR_7, str, sizeof(str));
}