MacroRat
Mouse code for the MacroRat
Diff: mbed-dev/targets/TARGET_STM/TARGET_STM32F2/device/stm32f2xx_hal_flash_ex.c
- Revision:
- 18:6a4db94011d3
--- /dev/null Thu Jan 01 00:00:00 1970 +0000
+++ b/mbed-dev/targets/TARGET_STM/TARGET_STM32F2/device/stm32f2xx_hal_flash_ex.c Sun May 14 23:18:57 2017 +0000
@@ -0,0 +1,706 @@
+/**
+ ******************************************************************************
+ * @file stm32f2xx_hal_flash_ex.c
+ * @author MCD Application Team
+ * @version V1.1.3
+ * @date 29-June-2016
+ * @brief Extended FLASH HAL module driver.
+ * This file provides firmware functions to manage the following
+ * functionalities of the FLASH extension peripheral:
+ * + Extended programming operations functions
+ *
+ @verbatim
+ ==============================================================================
+ ##### Flash Extension features #####
+ ==============================================================================
+
+ ##### How to use this driver #####
+ ==============================================================================
+ [..] This driver provides functions to configure and program the FLASH memory
+ of all STM32F2xx devices. It includes
+ (#) FLASH Memory Erase functions:
+ (++) Lock and Unlock the FLASH interface using HAL_FLASH_Unlock() and
+ HAL_FLASH_Lock() functions
+ (++) Erase function: Erase sector, erase all sectors
+ (++) There are two modes of erase :
+ (+++) Polling Mode using HAL_FLASHEx_Erase()
+ (+++) Interrupt Mode using HAL_FLASHEx_Erase_IT()
+
+ (#) Option Bytes Programming functions: Use HAL_FLASHEx_OBProgram() to :
+ (++) Set/Reset the write protection
+ (++) Set the Read protection Level
+ (++) Set the BOR level
+ (++) Program the user Option Bytes
+
+ @endverbatim
+ ******************************************************************************
+ * @attention
+ *
+ * <h2><center>© COPYRIGHT(c) 2016 STMicroelectronics</center></h2>
+ *
+ * Redistribution and use in source and binary forms, with or without modification,
+ * are permitted provided that the following conditions are met:
+ * 1. Redistributions of source code must retain the above copyright notice,
+ * this list of conditions and the following disclaimer.
+ * 2. Redistributions in binary form must reproduce the above copyright notice,
+ * this list of conditions and the following disclaimer in the documentation
+ * and/or other materials provided with the distribution.
+ * 3. Neither the name of STMicroelectronics nor the names of its contributors
+ * may be used to endorse or promote products derived from this software
+ * without specific prior written permission.
+ *
+ * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS"
+ * AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE
+ * IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE
+ * DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT HOLDER OR CONTRIBUTORS BE LIABLE
+ * FOR ANY DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL
+ * DAMAGES (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR
+ * SERVICES; LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER
+ * CAUSED AND ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY,
+ * OR TORT (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE
+ * OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
+ *
+ ******************************************************************************
+ */
+
+/* Includes ------------------------------------------------------------------*/
+#include "stm32f2xx_hal.h"
+
+/** @addtogroup STM32F2xx_HAL_Driver
+ * @{
+ */
+
+/** @defgroup FLASHEx FLASHEx
+ * @brief FLASH HAL Extension module driver
+ * @{
+ */
+
+#ifdef HAL_FLASH_MODULE_ENABLED
+
+/* Private typedef -----------------------------------------------------------*/
+/* Private define ------------------------------------------------------------*/
+/** @addtogroup FLASHEx_Private_Constants
+ * @{
+ */
+#define FLASH_TIMEOUT_VALUE ((uint32_t)50000U)/* 50 s */
+/**
+ * @}
+ */
+
+/* Private macro -------------------------------------------------------------*/
+/* Private variables ---------------------------------------------------------*/
+/** @addtogroup FLASHEx_Private_Variables
+ * @{
+ */
+extern FLASH_ProcessTypeDef pFlash;
+/**
+ * @}
+ */
+
+/* Private function prototypes -----------------------------------------------*/
+/** @addtogroup FLASHEx_Private_Functions
+ * @{
+ */
+/* Option bytes control */
+static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks);
+static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks);
+static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks);
+static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level);
+static HAL_StatusTypeDef FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby);
+static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level);
+static uint8_t FLASH_OB_GetUser(void);
+static uint16_t FLASH_OB_GetWRP(void);
+static uint8_t FLASH_OB_GetRDP(void);
+static uint8_t FLASH_OB_GetBOR(void);
+
+extern HAL_StatusTypeDef FLASH_WaitForLastOperation(uint32_t Timeout);
+/**
+ * @}
+ */
+
+/* Exported functions --------------------------------------------------------*/
+/** @defgroup FLASHEx_Exported_Functions FLASH Exported Functions
+ * @{
+ */
+
+/** @defgroup FLASHEx_Exported_Functions_Group1 Extended IO operation functions
+ * @brief Extended IO operation functions
+ *
+@verbatim
+ ===============================================================================
+ ##### Extended programming operation functions #####
+ ===============================================================================
+ [..]
+ This subsection provides a set of functions allowing to manage the Extension FLASH
+ programming operations.
+
+@endverbatim
+ * @{
+ */
+/**
+ * @brief Perform a mass erase or erase the specified FLASH memory sectors
+ * @param[in] pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that
+ * contains the configuration information for the erasing.
+ *
+ * @param[out] SectorError: pointer to variable that
+ * contains the configuration information on faulty sector in case of error
+ * (0xFFFFFFFF means that all the sectors have been correctly erased)
+ *
+ * @retval HAL Status
+ */
+HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *SectorError)
+{
+ HAL_StatusTypeDef status = HAL_ERROR;
+ uint32_t index = 0U;
+
+ /* Process Locked */
+ __HAL_LOCK(&pFlash);
+
+ /* Check the parameters */
+ assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ /*Initialization of SectorError variable*/
+ *SectorError = 0xFFFFFFFFU;
+
+ if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
+ {
+ /*Mass erase to be done*/
+ FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks);
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ /* if the erase operation is completed, disable the MER Bit */
+ FLASH->CR &= (~FLASH_MER_BIT);
+ }
+ else
+ {
+ /* Check the parameters */
+ assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
+
+ /* Erase by sector by sector to be done*/
+ for(index = pEraseInit->Sector; index < (pEraseInit->NbSectors + pEraseInit->Sector); index++)
+ {
+ FLASH_Erase_Sector(index, (uint8_t) pEraseInit->VoltageRange);
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ /* If the erase operation is completed, disable the SER and SNB Bits */
+ CLEAR_BIT(FLASH->CR, (FLASH_CR_SER | FLASH_CR_SNB));
+
+ if(status != HAL_OK)
+ {
+ /* In case of error, stop erase procedure and return the faulty sector*/
+ *SectorError = index;
+ break;
+ }
+ }
+ }
+ /* Flush the caches to be sure of the data consistency */
+ FLASH_FlushCaches();
+ }
+
+ /* Process Unlocked */
+ __HAL_UNLOCK(&pFlash);
+
+ return status;
+}
+
+/**
+ * @brief Perform a mass erase or erase the specified FLASH memory sectors with interrupt enabled
+ * @param pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that
+ * contains the configuration information for the erasing.
+ *
+ * @retval HAL Status
+ */
+HAL_StatusTypeDef HAL_FLASHEx_Erase_IT(FLASH_EraseInitTypeDef *pEraseInit)
+{
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Process Locked */
+ __HAL_LOCK(&pFlash);
+
+ /* Check the parameters */
+ assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
+
+ /* Enable End of FLASH Operation interrupt */
+ __HAL_FLASH_ENABLE_IT(FLASH_IT_EOP);
+
+ /* Enable Error source interrupt */
+ __HAL_FLASH_ENABLE_IT(FLASH_IT_ERR);
+
+ /* Clear pending flags (if any) */
+ __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |\
+ FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR| FLASH_FLAG_PGSERR);
+
+ if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
+ {
+ /*Mass erase to be done*/
+ pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE;
+ pFlash.Bank = pEraseInit->Banks;
+ FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks);
+ }
+ else
+ {
+ /* Erase by sector to be done*/
+
+ /* Check the parameters */
+ assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
+
+ pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE;
+ pFlash.NbSectorsToErase = pEraseInit->NbSectors;
+ pFlash.Sector = pEraseInit->Sector;
+ pFlash.VoltageForErase = (uint8_t)pEraseInit->VoltageRange;
+
+ /*Erase 1st sector and wait for IT*/
+ FLASH_Erase_Sector(pEraseInit->Sector, pEraseInit->VoltageRange);
+ }
+
+ return status;
+}
+
+/**
+ * @brief Program option bytes
+ * @param pOBInit: pointer to an FLASH_OBInitStruct structure that
+ * contains the configuration information for the programming.
+ *
+ * @retval HAL Status
+ */
+HAL_StatusTypeDef HAL_FLASHEx_OBProgram(FLASH_OBProgramInitTypeDef *pOBInit)
+{
+ HAL_StatusTypeDef status = HAL_ERROR;
+
+ /* Process Locked */
+ __HAL_LOCK(&pFlash);
+
+ /* Check the parameters */
+ assert_param(IS_OPTIONBYTE(pOBInit->OptionType));
+
+ /*Write protection configuration*/
+ if((pOBInit->OptionType & OPTIONBYTE_WRP) == OPTIONBYTE_WRP)
+ {
+ assert_param(IS_WRPSTATE(pOBInit->WRPState));
+ if(pOBInit->WRPState == OB_WRPSTATE_ENABLE)
+ {
+ /*Enable of Write protection on the selected Sector*/
+ status = FLASH_OB_EnableWRP(pOBInit->WRPSector, pOBInit->Banks);
+ }
+ else
+ {
+ /*Disable of Write protection on the selected Sector*/
+ status = FLASH_OB_DisableWRP(pOBInit->WRPSector, pOBInit->Banks);
+ }
+ }
+
+ /*Read protection configuration*/
+ if((pOBInit->OptionType & OPTIONBYTE_RDP) == OPTIONBYTE_RDP)
+ {
+ status = FLASH_OB_RDP_LevelConfig(pOBInit->RDPLevel);
+ }
+
+ /*USER configuration*/
+ if((pOBInit->OptionType & OPTIONBYTE_USER) == OPTIONBYTE_USER)
+ {
+ status = FLASH_OB_UserConfig(pOBInit->USERConfig&OB_IWDG_SW,
+ pOBInit->USERConfig&OB_STOP_NO_RST,
+ pOBInit->USERConfig&OB_STDBY_NO_RST);
+ }
+
+ /*BOR Level configuration*/
+ if((pOBInit->OptionType & OPTIONBYTE_BOR) == OPTIONBYTE_BOR)
+ {
+ status = FLASH_OB_BOR_LevelConfig(pOBInit->BORLevel);
+ }
+
+ /* Process Unlocked */
+ __HAL_UNLOCK(&pFlash);
+
+ return status;
+}
+
+/**
+ * @brief Get the Option byte configuration
+ * @param pOBInit: pointer to an FLASH_OBInitStruct structure that
+ * contains the configuration information for the programming.
+ *
+ * @retval None
+ */
+void HAL_FLASHEx_OBGetConfig(FLASH_OBProgramInitTypeDef *pOBInit)
+{
+ pOBInit->OptionType = OPTIONBYTE_WRP | OPTIONBYTE_RDP | OPTIONBYTE_USER | OPTIONBYTE_BOR;
+
+ /*Get WRP*/
+ pOBInit->WRPSector = (uint32_t)FLASH_OB_GetWRP();
+
+ /*Get RDP Level*/
+ pOBInit->RDPLevel = (uint32_t)FLASH_OB_GetRDP();
+
+ /*Get USER*/
+ pOBInit->USERConfig = (uint8_t)FLASH_OB_GetUser();
+
+ /*Get BOR Level*/
+ pOBInit->BORLevel = (uint32_t)FLASH_OB_GetBOR();
+}
+
+/**
+ * @}
+ */
+
+/**
+ * @brief Erase the specified FLASH memory sector
+ * @param Sector: FLASH sector to erase
+ * The value of this parameter depend on device used within the same series
+ * @param VoltageRange: The device voltage range which defines the erase parallelism.
+ * This parameter can be one of the following values:
+ * @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
+ * the operation will be done by byte (8-bit)
+ * @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
+ * the operation will be done by half word (16-bit)
+ * @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
+ * the operation will be done by word (32-bit)
+ * @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
+ * the operation will be done by double word (64-bit)
+ *
+ * @retval None
+ */
+void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange)
+{
+ uint32_t tmp_psize = 0U;
+
+ /* Check the parameters */
+ assert_param(IS_FLASH_SECTOR(Sector));
+ assert_param(IS_VOLTAGERANGE(VoltageRange));
+
+ if(VoltageRange == FLASH_VOLTAGE_RANGE_1)
+ {
+ tmp_psize = FLASH_PSIZE_BYTE;
+ }
+ else if(VoltageRange == FLASH_VOLTAGE_RANGE_2)
+ {
+ tmp_psize = FLASH_PSIZE_HALF_WORD;
+ }
+ else if(VoltageRange == FLASH_VOLTAGE_RANGE_3)
+ {
+ tmp_psize = FLASH_PSIZE_WORD;
+ }
+ else
+ {
+ tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
+ }
+
+ /* If the previous operation is completed, proceed to erase the sector */
+ CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE);
+ FLASH->CR |= tmp_psize;
+ CLEAR_BIT(FLASH->CR, FLASH_CR_SNB);
+ FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB));
+ FLASH->CR |= FLASH_CR_STRT;
+}
+
+/**
+ * @brief Flush the instruction and data caches
+ * @retval None
+ */
+void FLASH_FlushCaches(void)
+{
+ /* Flush instruction cache */
+ if(READ_BIT(FLASH->ACR, FLASH_ACR_ICEN) != RESET)
+ {
+ /* Disable instruction cache */
+ __HAL_FLASH_INSTRUCTION_CACHE_DISABLE();
+ /* Reset instruction cache */
+ __HAL_FLASH_INSTRUCTION_CACHE_RESET();
+ /* Enable instruction cache */
+ __HAL_FLASH_INSTRUCTION_CACHE_ENABLE();
+ }
+
+ /* Flush data cache */
+ if(READ_BIT(FLASH->ACR, FLASH_ACR_DCEN) != RESET)
+ {
+ /* Disable data cache */
+ __HAL_FLASH_DATA_CACHE_DISABLE();
+ /* Reset data cache */
+ __HAL_FLASH_DATA_CACHE_RESET();
+ /* Enable data cache */
+ __HAL_FLASH_DATA_CACHE_ENABLE();
+ }
+}
+
+/**
+ * @brief Mass erase of FLASH memory
+ * @param VoltageRange: The device voltage range which defines the erase parallelism.
+ * This parameter can be one of the following values:
+ * @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
+ * the operation will be done by byte (8-bit)
+ * @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
+ * the operation will be done by half word (16-bit)
+ * @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
+ * the operation will be done by word (32-bit)
+ * @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
+ * the operation will be done by double word (64-bit)
+ *
+ * @param Banks: Banks to be erased
+ * This parameter can be one of the following values:
+ * @arg FLASH_BANK_1: Bank1 to be erased
+ *
+ * @retval None
+ */
+static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks)
+{
+ /* Check the parameters */
+ assert_param(IS_VOLTAGERANGE(VoltageRange));
+ assert_param(IS_FLASH_BANK(Banks));
+
+ /* If the previous operation is completed, proceed to erase all sectors */
+ CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE);
+ FLASH->CR |= FLASH_CR_MER;
+ FLASH->CR |= FLASH_CR_STRT | ((uint32_t)VoltageRange <<8U);
+}
+
+/**
+ * @brief Enable the write protection of the desired bank 1 sectors
+ *
+ * @note When the memory read protection level is selected (RDP level = 1),
+ * it is not possible to program or erase the flash sector i if CortexM3
+ * debug features are connected or boot code is executed in RAM, even if nWRPi = 1
+ *
+ * @param WRPSector: specifies the sector(s) to be write protected.
+ * The value of this parameter depend on device used within the same series
+ *
+ * @param Banks: Enable write protection on all the sectors for the specific bank
+ * This parameter can be one of the following values:
+ * @arg FLASH_BANK_1: WRP on all sectors of bank1
+ *
+ * @retval HAL Status
+ */
+static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks)
+{
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Check the parameters */
+ assert_param(IS_OB_WRP_SECTOR(WRPSector));
+ assert_param(IS_FLASH_BANK(Banks));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~WRPSector);
+ }
+
+ return status;
+}
+
+/**
+ * @brief Disable the write protection of the desired bank 1 sectors
+ *
+ * @note When the memory read protection level is selected (RDP level = 1),
+ * it is not possible to program or erase the flash sector if CortexM3
+ * debug features are connected or boot code is executed in RAM, even if nWRPi = 1
+ *
+ * @param WRPSector: specifies the sector(s) to be write protected.
+ * The value of this parameter depend on device used within the same series
+ *
+ * @param Banks: Enable write protection on all the sectors for the specific bank
+ * This parameter can be one of the following values:
+ * @arg FLASH_BANK_1: WRP on all sectors of bank1
+ *
+ * @retval HAL Status
+ */
+static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks)
+{
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Check the parameters */
+ assert_param(IS_OB_WRP_SECTOR(WRPSector));
+ assert_param(IS_FLASH_BANK(Banks));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)WRPSector;
+ }
+
+ return status;
+}
+
+/**
+ * @brief Set the read protection level.
+ * @param Level: specifies the read protection level.
+ * This parameter can be one of the following values:
+ * @arg OB_RDP_LEVEL_0: No protection
+ * @arg OB_RDP_LEVEL_1: Read protection of the memory
+ * @arg OB_RDP_LEVEL_2: Full chip protection
+ *
+ * @note WARNING: When enabling OB_RDP level 2 it's no more possible to go back to level 1 or 0
+ *
+ * @retval HAL Status
+ */
+static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level)
+{
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Check the parameters */
+ assert_param(IS_OB_RDP_LEVEL(Level));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ *(__IO uint8_t*)OPTCR_BYTE1_ADDRESS = Level;
+ }
+
+ return status;
+}
+
+/**
+ * @brief Program the FLASH User Option Byte: IWDG_SW / RST_STOP / RST_STDBY.
+ * @param Iwdg: Selects the IWDG mode
+ * This parameter can be one of the following values:
+ * @arg OB_IWDG_SW: Software IWDG selected
+ * @arg OB_IWDG_HW: Hardware IWDG selected
+ * @param Stop: Reset event when entering STOP mode.
+ * This parameter can be one of the following values:
+ * @arg OB_STOP_NO_RST: No reset generated when entering in STOP
+ * @arg OB_STOP_RST: Reset generated when entering in STOP
+ * @param Stdby: Reset event when entering Standby mode.
+ * This parameter can be one of the following values:
+ * @arg OB_STDBY_NO_RST: No reset generated when entering in STANDBY
+ * @arg OB_STDBY_RST: Reset generated when entering in STANDBY
+ * @retval HAL Status
+ */
+static HAL_StatusTypeDef FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby)
+{
+ uint8_t optiontmp = 0xFFU;
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Check the parameters */
+ assert_param(IS_OB_IWDG_SOURCE(Iwdg));
+ assert_param(IS_OB_STOP_SOURCE(Stop));
+ assert_param(IS_OB_STDBY_SOURCE(Stdby));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ /* Mask OPTLOCK, OPTSTRT, BOR_LEV and BFB2 bits */
+ optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE0_ADDRESS) & (uint8_t)0x1FU);
+
+ /* Update User Option Byte */
+ *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS = Iwdg | (uint8_t)(Stdby | (uint8_t)(Stop | ((uint8_t)optiontmp)));
+ }
+
+ return status;
+}
+
+/**
+ * @brief Set the BOR Level.
+ * @param Level: specifies the Option Bytes BOR Reset Level.
+ * This parameter can be one of the following values:
+ * @arg OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
+ * @arg OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
+ * @arg OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
+ * @arg OB_BOR_OFF: Supply voltage ranges from 1.62 to 2.1 V
+ * @retval HAL Status
+ */
+static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level)
+{
+ /* Check the parameters */
+ assert_param(IS_OB_BOR_LEVEL(Level));
+
+ /* Set the BOR Level */
+ *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BOR_LEV);
+ *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= Level;
+
+ return HAL_OK;
+
+}
+
+/**
+ * @brief Return the FLASH User Option Byte value.
+ * @retval uint8_t FLASH User Option Bytes values: IWDG_SW(Bit0), RST_STOP(Bit1)
+ * and RST_STDBY(Bit2).
+ */
+static uint8_t FLASH_OB_GetUser(void)
+{
+ /* Return the User Option Byte */
+ return ((uint8_t)(FLASH->OPTCR & 0xE0U));
+}
+
+/**
+ * @brief Return the FLASH Write Protection Option Bytes value.
+ * @retval uint16_t FLASH Write Protection Option Bytes value
+ */
+static uint16_t FLASH_OB_GetWRP(void)
+{
+ /* Return the FLASH write protection Register value */
+ return (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS));
+}
+
+/**
+ * @brief Returns the FLASH Read Protection level.
+ * @retval FLASH ReadOut Protection Status:
+ * This parameter can be one of the following values:
+ * @arg OB_RDP_LEVEL_0: No protection
+ * @arg OB_RDP_LEVEL_1: Read protection of the memory
+ * @arg OB_RDP_LEVEL_2: Full chip protection
+ */
+static uint8_t FLASH_OB_GetRDP(void)
+{
+ uint8_t readstatus = OB_RDP_LEVEL_0;
+
+ if((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS) == (uint8_t)OB_RDP_LEVEL_2))
+ {
+ readstatus = OB_RDP_LEVEL_2;
+ }
+ else if((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS) == (uint8_t)OB_RDP_LEVEL_1))
+ {
+ readstatus = OB_RDP_LEVEL_1;
+ }
+ else
+ {
+ readstatus = OB_RDP_LEVEL_0;
+ }
+
+ return readstatus;
+}
+
+/**
+ * @brief Returns the FLASH BOR level.
+ * @retval uint8_t The FLASH BOR level:
+ * - OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
+ * - OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
+ * - OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
+ * - OB_BOR_OFF : Supply voltage ranges from 1.62 to 2.1 V
+ */
+static uint8_t FLASH_OB_GetBOR(void)
+{
+ /* Return the FLASH BOR level */
+ return (uint8_t)(*(__IO uint8_t *)(OPTCR_BYTE0_ADDRESS) & (uint8_t)0x0CU);
+}
+
+/**
+ * @}
+ */
+
+#endif /* HAL_FLASH_MODULE_ENABLED */
+
+/**
+ * @}
+ */
+
+/**
+ * @}
+ */
+
+/************************ (C) COPYRIGHT STMicroelectronics *****END OF FILE****/