Thomas Lyp
Initial commit
Diff: mbed-dev-master/targets/TARGET_STM/TARGET_STM32F4/device/stm32f4xx_hal_flash_ex.c
- Revision:
- 0:bb348c97df44
--- /dev/null Thu Jan 01 00:00:00 1970 +0000
+++ b/mbed-dev-master/targets/TARGET_STM/TARGET_STM32F4/device/stm32f4xx_hal_flash_ex.c Wed Sep 16 01:11:49 2020 +0000
@@ -0,0 +1,1366 @@
+/**
+ ******************************************************************************
+ * @file stm32f4xx_hal_flash_ex.c
+ * @author MCD Application Team
+ * @brief Extended FLASH HAL module driver.
+ * This file provides firmware functions to manage the following
+ * functionalities of the FLASH extension peripheral:
+ * + Extended programming operations functions
+ *
+ @verbatim
+ ==============================================================================
+ ##### Flash Extension features #####
+ ==============================================================================
+
+ [..] Comparing to other previous devices, the FLASH interface for STM32F427xx/437xx and
+ STM32F429xx/439xx devices contains the following additional features
+
+ (+) Capacity up to 2 Mbyte with dual bank architecture supporting read-while-write
+ capability (RWW)
+ (+) Dual bank memory organization
+ (+) PCROP protection for all banks
+
+ ##### How to use this driver #####
+ ==============================================================================
+ [..] This driver provides functions to configure and program the FLASH memory
+ of all STM32F427xx/437xx, STM32F429xx/439xx, STM32F469xx/479xx and STM32F446xx
+ devices. It includes
+ (#) FLASH Memory Erase functions:
+ (++) Lock and Unlock the FLASH interface using HAL_FLASH_Unlock() and
+ HAL_FLASH_Lock() functions
+ (++) Erase function: Erase sector, erase all sectors
+ (++) There are two modes of erase :
+ (+++) Polling Mode using HAL_FLASHEx_Erase()
+ (+++) Interrupt Mode using HAL_FLASHEx_Erase_IT()
+
+ (#) Option Bytes Programming functions: Use HAL_FLASHEx_OBProgram() to :
+ (++) Set/Reset the write protection
+ (++) Set the Read protection Level
+ (++) Set the BOR level
+ (++) Program the user Option Bytes
+ (#) Advanced Option Bytes Programming functions: Use HAL_FLASHEx_AdvOBProgram() to :
+ (++) Extended space (bank 2) erase function
+ (++) Full FLASH space (2 Mo) erase (bank 1 and bank 2)
+ (++) Dual Boot activation
+ (++) Write protection configuration for bank 2
+ (++) PCROP protection configuration and control for both banks
+
+ @endverbatim
+ ******************************************************************************
+ * @attention
+ *
+ * <h2><center>© COPYRIGHT(c) 2017 STMicroelectronics</center></h2>
+ *
+ * Redistribution and use in source and binary forms, with or without modification,
+ * are permitted provided that the following conditions are met:
+ * 1. Redistributions of source code must retain the above copyright notice,
+ * this list of conditions and the following disclaimer.
+ * 2. Redistributions in binary form must reproduce the above copyright notice,
+ * this list of conditions and the following disclaimer in the documentation
+ * and/or other materials provided with the distribution.
+ * 3. Neither the name of STMicroelectronics nor the names of its contributors
+ * may be used to endorse or promote products derived from this software
+ * without specific prior written permission.
+ *
+ * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS"
+ * AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE
+ * IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE
+ * DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT HOLDER OR CONTRIBUTORS BE LIABLE
+ * FOR ANY DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL
+ * DAMAGES (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR
+ * SERVICES; LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER
+ * CAUSED AND ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY,
+ * OR TORT (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE
+ * OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
+ *
+ ******************************************************************************
+ */
+
+/* Includes ------------------------------------------------------------------*/
+#include "stm32f4xx_hal.h"
+
+/** @addtogroup STM32F4xx_HAL_Driver
+ * @{
+ */
+
+/** @defgroup FLASHEx FLASHEx
+ * @brief FLASH HAL Extension module driver
+ * @{
+ */
+
+#ifdef HAL_FLASH_MODULE_ENABLED
+
+/* Private typedef -----------------------------------------------------------*/
+/* Private define ------------------------------------------------------------*/
+/** @addtogroup FLASHEx_Private_Constants
+ * @{
+ */
+#define FLASH_TIMEOUT_VALUE 50000U /* 50 s */
+/**
+ * @}
+ */
+
+/* Private macro -------------------------------------------------------------*/
+/* Private variables ---------------------------------------------------------*/
+/** @addtogroup FLASHEx_Private_Variables
+ * @{
+ */
+extern FLASH_ProcessTypeDef pFlash;
+/**
+ * @}
+ */
+
+/* Private function prototypes -----------------------------------------------*/
+/** @addtogroup FLASHEx_Private_Functions
+ * @{
+ */
+/* Option bytes control */
+static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks);
+static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks);
+static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks);
+static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level);
+static HAL_StatusTypeDef FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby);
+static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level);
+static uint8_t FLASH_OB_GetUser(void);
+static uint16_t FLASH_OB_GetWRP(void);
+static uint8_t FLASH_OB_GetRDP(void);
+static uint8_t FLASH_OB_GetBOR(void);
+
+#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F410Tx) || defined(STM32F410Cx) || defined(STM32F410Rx) || defined(STM32F411xE) ||\
+ defined(STM32F446xx) || defined(STM32F412Zx) || defined(STM32F412Vx) || defined(STM32F412Rx) || defined(STM32F412Cx) || defined(STM32F413xx) ||\
+ defined(STM32F423xx)
+static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t Sector);
+static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t Sector);
+#endif /* STM32F401xC || STM32F401xE || STM32F410xx || STM32F411xE || STM32F446xx || STM32F412Zx || STM32F412Vx || STM32F412Rx || STM32F412Cx
+ STM32F413xx || STM32F423xx */
+
+#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx) || defined(STM32F469xx) || defined(STM32F479xx)
+static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks);
+static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks);
+static HAL_StatusTypeDef FLASH_OB_BootConfig(uint8_t BootConfig);
+#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx || STM32F469xx || STM32F479xx */
+
+extern HAL_StatusTypeDef FLASH_WaitForLastOperation(uint32_t Timeout);
+/**
+ * @}
+ */
+
+/* Exported functions --------------------------------------------------------*/
+/** @defgroup FLASHEx_Exported_Functions FLASHEx Exported Functions
+ * @{
+ */
+
+/** @defgroup FLASHEx_Exported_Functions_Group1 Extended IO operation functions
+ * @brief Extended IO operation functions
+ *
+@verbatim
+ ===============================================================================
+ ##### Extended programming operation functions #####
+ ===============================================================================
+ [..]
+ This subsection provides a set of functions allowing to manage the Extension FLASH
+ programming operations.
+
+@endverbatim
+ * @{
+ */
+/**
+ * @brief Perform a mass erase or erase the specified FLASH memory sectors
+ * @param[in] pEraseInit pointer to an FLASH_EraseInitTypeDef structure that
+ * contains the configuration information for the erasing.
+ *
+ * @param[out] SectorError pointer to variable that
+ * contains the configuration information on faulty sector in case of error
+ * (0xFFFFFFFFU means that all the sectors have been correctly erased)
+ *
+ * @retval HAL Status
+ */
+HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *SectorError)
+{
+ HAL_StatusTypeDef status = HAL_ERROR;
+ uint32_t index = 0U;
+
+ /* Process Locked */
+ __HAL_LOCK(&pFlash);
+
+ /* Check the parameters */
+ assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ /*Initialization of SectorError variable*/
+ *SectorError = 0xFFFFFFFFU;
+
+ if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
+ {
+ /*Mass erase to be done*/
+ FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks);
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ /* if the erase operation is completed, disable the MER Bit */
+ FLASH->CR &= (~FLASH_MER_BIT);
+ }
+ else
+ {
+ /* Check the parameters */
+ assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
+
+ /* Erase by sector by sector to be done*/
+ for(index = pEraseInit->Sector; index < (pEraseInit->NbSectors + pEraseInit->Sector); index++)
+ {
+ FLASH_Erase_Sector(index, (uint8_t) pEraseInit->VoltageRange);
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ /* If the erase operation is completed, disable the SER and SNB Bits */
+ CLEAR_BIT(FLASH->CR, (FLASH_CR_SER | FLASH_CR_SNB));
+
+ if(status != HAL_OK)
+ {
+ /* In case of error, stop erase procedure and return the faulty sector*/
+ *SectorError = index;
+ break;
+ }
+ }
+ }
+ /* Flush the caches to be sure of the data consistency */
+ FLASH_FlushCaches();
+ }
+
+ /* Process Unlocked */
+ __HAL_UNLOCK(&pFlash);
+
+ return status;
+}
+
+/**
+ * @brief Perform a mass erase or erase the specified FLASH memory sectors with interrupt enabled
+ * @param pEraseInit pointer to an FLASH_EraseInitTypeDef structure that
+ * contains the configuration information for the erasing.
+ *
+ * @retval HAL Status
+ */
+HAL_StatusTypeDef HAL_FLASHEx_Erase_IT(FLASH_EraseInitTypeDef *pEraseInit)
+{
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Process Locked */
+ __HAL_LOCK(&pFlash);
+
+ /* Check the parameters */
+ assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));
+
+ /* Enable End of FLASH Operation interrupt */
+ __HAL_FLASH_ENABLE_IT(FLASH_IT_EOP);
+
+ /* Enable Error source interrupt */
+ __HAL_FLASH_ENABLE_IT(FLASH_IT_ERR);
+
+ /* Clear pending flags (if any) */
+ __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |\
+ FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR| FLASH_FLAG_PGSERR);
+
+ if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
+ {
+ /*Mass erase to be done*/
+ pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE;
+ pFlash.Bank = pEraseInit->Banks;
+ FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks);
+ }
+ else
+ {
+ /* Erase by sector to be done*/
+
+ /* Check the parameters */
+ assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
+
+ pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE;
+ pFlash.NbSectorsToErase = pEraseInit->NbSectors;
+ pFlash.Sector = pEraseInit->Sector;
+ pFlash.VoltageForErase = (uint8_t)pEraseInit->VoltageRange;
+
+ /*Erase 1st sector and wait for IT*/
+ FLASH_Erase_Sector(pEraseInit->Sector, pEraseInit->VoltageRange);
+ }
+
+ return status;
+}
+
+/**
+ * @brief Program option bytes
+ * @param pOBInit pointer to an FLASH_OBInitStruct structure that
+ * contains the configuration information for the programming.
+ *
+ * @retval HAL Status
+ */
+HAL_StatusTypeDef HAL_FLASHEx_OBProgram(FLASH_OBProgramInitTypeDef *pOBInit)
+{
+ HAL_StatusTypeDef status = HAL_ERROR;
+
+ /* Process Locked */
+ __HAL_LOCK(&pFlash);
+
+ /* Check the parameters */
+ assert_param(IS_OPTIONBYTE(pOBInit->OptionType));
+
+ /*Write protection configuration*/
+ if((pOBInit->OptionType & OPTIONBYTE_WRP) == OPTIONBYTE_WRP)
+ {
+ assert_param(IS_WRPSTATE(pOBInit->WRPState));
+ if(pOBInit->WRPState == OB_WRPSTATE_ENABLE)
+ {
+ /*Enable of Write protection on the selected Sector*/
+ status = FLASH_OB_EnableWRP(pOBInit->WRPSector, pOBInit->Banks);
+ }
+ else
+ {
+ /*Disable of Write protection on the selected Sector*/
+ status = FLASH_OB_DisableWRP(pOBInit->WRPSector, pOBInit->Banks);
+ }
+ }
+
+ /*Read protection configuration*/
+ if((pOBInit->OptionType & OPTIONBYTE_RDP) == OPTIONBYTE_RDP)
+ {
+ status = FLASH_OB_RDP_LevelConfig(pOBInit->RDPLevel);
+ }
+
+ /*USER configuration*/
+ if((pOBInit->OptionType & OPTIONBYTE_USER) == OPTIONBYTE_USER)
+ {
+ status = FLASH_OB_UserConfig(pOBInit->USERConfig&OB_IWDG_SW,
+ pOBInit->USERConfig&OB_STOP_NO_RST,
+ pOBInit->USERConfig&OB_STDBY_NO_RST);
+ }
+
+ /*BOR Level configuration*/
+ if((pOBInit->OptionType & OPTIONBYTE_BOR) == OPTIONBYTE_BOR)
+ {
+ status = FLASH_OB_BOR_LevelConfig(pOBInit->BORLevel);
+ }
+
+ /* Process Unlocked */
+ __HAL_UNLOCK(&pFlash);
+
+ return status;
+}
+
+/**
+ * @brief Get the Option byte configuration
+ * @param pOBInit pointer to an FLASH_OBInitStruct structure that
+ * contains the configuration information for the programming.
+ *
+ * @retval None
+ */
+void HAL_FLASHEx_OBGetConfig(FLASH_OBProgramInitTypeDef *pOBInit)
+{
+ pOBInit->OptionType = OPTIONBYTE_WRP | OPTIONBYTE_RDP | OPTIONBYTE_USER | OPTIONBYTE_BOR;
+
+ /*Get WRP*/
+ pOBInit->WRPSector = (uint32_t)FLASH_OB_GetWRP();
+
+ /*Get RDP Level*/
+ pOBInit->RDPLevel = (uint32_t)FLASH_OB_GetRDP();
+
+ /*Get USER*/
+ pOBInit->USERConfig = (uint8_t)FLASH_OB_GetUser();
+
+ /*Get BOR Level*/
+ pOBInit->BORLevel = (uint32_t)FLASH_OB_GetBOR();
+}
+
+#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx) || defined(STM32F439xx) ||\
+ defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F410Tx) || defined(STM32F410Cx) ||\
+ defined(STM32F410Rx) || defined(STM32F411xE) || defined(STM32F446xx) || defined(STM32F469xx) ||\
+ defined(STM32F479xx) || defined(STM32F412Zx) || defined(STM32F412Vx) || defined(STM32F412Rx) ||\
+ defined(STM32F412Cx) || defined(STM32F413xx) || defined(STM32F423xx)
+/**
+ * @brief Program option bytes
+ * @param pAdvOBInit pointer to an FLASH_AdvOBProgramInitTypeDef structure that
+ * contains the configuration information for the programming.
+ *
+ * @retval HAL Status
+ */
+HAL_StatusTypeDef HAL_FLASHEx_AdvOBProgram (FLASH_AdvOBProgramInitTypeDef *pAdvOBInit)
+{
+ HAL_StatusTypeDef status = HAL_ERROR;
+
+ /* Check the parameters */
+ assert_param(IS_OBEX(pAdvOBInit->OptionType));
+
+ /*Program PCROP option byte*/
+ if(((pAdvOBInit->OptionType) & OPTIONBYTE_PCROP) == OPTIONBYTE_PCROP)
+ {
+ /* Check the parameters */
+ assert_param(IS_PCROPSTATE(pAdvOBInit->PCROPState));
+ if((pAdvOBInit->PCROPState) == OB_PCROP_STATE_ENABLE)
+ {
+ /*Enable of Write protection on the selected Sector*/
+#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F410Tx) || defined(STM32F410Cx) || defined(STM32F410Rx) ||\
+ defined(STM32F411xE) || defined(STM32F446xx) || defined(STM32F412Zx) || defined(STM32F412Vx) || defined(STM32F412Rx) ||\
+ defined(STM32F412Cx) || defined(STM32F413xx) || defined(STM32F423xx)
+ status = FLASH_OB_EnablePCROP(pAdvOBInit->Sectors);
+#else /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx || STM32F469xx || STM32F479xx */
+ status = FLASH_OB_EnablePCROP(pAdvOBInit->SectorsBank1, pAdvOBInit->SectorsBank2, pAdvOBInit->Banks);
+#endif /* STM32F401xC || STM32F401xE || STM32F410xx || STM32F411xE || STM32F446xx || STM32F412Zx || STM32F412Vx || STM32F412Rx || STM32F412Cx ||
+ STM32F413xx || STM32F423xx */
+ }
+ else
+ {
+ /*Disable of Write protection on the selected Sector*/
+#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F410Tx) || defined(STM32F410Cx) || defined(STM32F410Rx) ||\
+ defined(STM32F411xE) || defined(STM32F446xx) || defined(STM32F412Zx) || defined(STM32F412Vx) || defined(STM32F412Rx) ||\
+ defined(STM32F412Cx) || defined(STM32F413xx) || defined(STM32F423xx)
+ status = FLASH_OB_DisablePCROP(pAdvOBInit->Sectors);
+#else /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx || STM32F469xx || STM32F479xx */
+ status = FLASH_OB_DisablePCROP(pAdvOBInit->SectorsBank1, pAdvOBInit->SectorsBank2, pAdvOBInit->Banks);
+#endif /* STM32F401xC || STM32F401xE || STM32F410xx || STM32F411xE || STM32F446xx || STM32F412Zx || STM32F412Vx || STM32F412Rx || STM32F412Cx ||
+ STM32F413xx || STM32F423xx */
+ }
+ }
+
+#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx) || defined(STM32F439xx) || defined(STM32F469xx) || defined(STM32F479xx)
+ /*Program BOOT config option byte*/
+ if(((pAdvOBInit->OptionType) & OPTIONBYTE_BOOTCONFIG) == OPTIONBYTE_BOOTCONFIG)
+ {
+ status = FLASH_OB_BootConfig(pAdvOBInit->BootConfig);
+ }
+#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx || STM32F469xx || STM32F479xx */
+
+ return status;
+}
+
+/**
+ * @brief Get the OBEX byte configuration
+ * @param pAdvOBInit pointer to an FLASH_AdvOBProgramInitTypeDef structure that
+ * contains the configuration information for the programming.
+ *
+ * @retval None
+ */
+void HAL_FLASHEx_AdvOBGetConfig(FLASH_AdvOBProgramInitTypeDef *pAdvOBInit)
+{
+#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F410Tx) || defined(STM32F410Cx) || defined(STM32F410Rx) ||\
+ defined(STM32F411xE) || defined(STM32F446xx) || defined(STM32F412Zx) || defined(STM32F412Vx) || defined(STM32F412Rx) ||\
+ defined(STM32F412Cx) || defined(STM32F413xx) || defined(STM32F423xx)
+ /*Get Sector*/
+ pAdvOBInit->Sectors = (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS));
+#else /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx || STM32F469xx || STM32F479xx */
+ /*Get Sector for Bank1*/
+ pAdvOBInit->SectorsBank1 = (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS));
+
+ /*Get Sector for Bank2*/
+ pAdvOBInit->SectorsBank2 = (*(__IO uint16_t *)(OPTCR1_BYTE2_ADDRESS));
+
+ /*Get Boot config OB*/
+ pAdvOBInit->BootConfig = *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS;
+#endif /* STM32F401xC || STM32F401xE || STM32F410xx || STM32F411xE || STM32F446xx || STM32F412Zx || STM32F412Vx || STM32F412Rx || STM32F412Cx ||
+ STM32F413xx || STM32F423xx */
+}
+
+/**
+ * @brief Select the Protection Mode
+ *
+ * @note After PCROP activated Option Byte modification NOT POSSIBLE! excepted
+ * Global Read Out Protection modification (from level1 to level0)
+ * @note Once SPRMOD bit is active unprotection of a protected sector is not possible
+ * @note Read a protected sector will set RDERR Flag and write a protected sector will set WRPERR Flag
+ * @note This function can be used only for STM32F42xxx/STM32F43xxx/STM32F401xx/STM32F411xx/STM32F446xx/
+ * STM32F469xx/STM32F479xx/STM32F412xx/STM32F413xx devices.
+ *
+ * @retval HAL Status
+ */
+HAL_StatusTypeDef HAL_FLASHEx_OB_SelectPCROP(void)
+{
+ uint8_t optiontmp = 0xFF;
+
+ /* Mask SPRMOD bit */
+ optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE3_ADDRESS) & (uint8_t)0x7F);
+
+ /* Update Option Byte */
+ *(__IO uint8_t *)OPTCR_BYTE3_ADDRESS = (uint8_t)(OB_PCROP_SELECTED | optiontmp);
+
+ return HAL_OK;
+}
+
+/**
+ * @brief Deselect the Protection Mode
+ *
+ * @note After PCROP activated Option Byte modification NOT POSSIBLE! excepted
+ * Global Read Out Protection modification (from level1 to level0)
+ * @note Once SPRMOD bit is active unprotection of a protected sector is not possible
+ * @note Read a protected sector will set RDERR Flag and write a protected sector will set WRPERR Flag
+ * @note This function can be used only for STM32F42xxx/STM32F43xxx/STM32F401xx/STM32F411xx/STM32F446xx/
+ * STM32F469xx/STM32F479xx/STM32F412xx/STM32F413xx devices.
+ *
+ * @retval HAL Status
+ */
+HAL_StatusTypeDef HAL_FLASHEx_OB_DeSelectPCROP(void)
+{
+ uint8_t optiontmp = 0xFF;
+
+ /* Mask SPRMOD bit */
+ optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE3_ADDRESS) & (uint8_t)0x7F);
+
+ /* Update Option Byte */
+ *(__IO uint8_t *)OPTCR_BYTE3_ADDRESS = (uint8_t)(OB_PCROP_DESELECTED | optiontmp);
+
+ return HAL_OK;
+}
+#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx || STM32F401xC || STM32F401xE || STM32F410xx ||\
+ STM32F411xE || STM32F469xx || STM32F479xx || STM32F412Zx || STM32F412Vx || STM32F412Rx || STM32F412Cx ||
+ STM32F413xx || STM32F423xx */
+
+#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx) || defined(STM32F469xx) || defined(STM32F479xx)
+/**
+ * @brief Returns the FLASH Write Protection Option Bytes value for Bank 2
+ * @note This function can be used only for STM32F42xxx/STM32F43xxx/STM32F469xx/STM32F479xx devices.
+ * @retval The FLASH Write Protection Option Bytes value
+ */
+uint16_t HAL_FLASHEx_OB_GetBank2WRP(void)
+{
+ /* Return the FLASH write protection Register value */
+ return (*(__IO uint16_t *)(OPTCR1_BYTE2_ADDRESS));
+}
+#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx || STM32F469xx || STM32F479xx */
+
+/**
+ * @}
+ */
+
+#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx) || defined(STM32F439xx) || defined(STM32F469xx) || defined(STM32F479xx)
+/**
+ * @brief Full erase of FLASH memory sectors
+ * @param VoltageRange The device voltage range which defines the erase parallelism.
+ * This parameter can be one of the following values:
+ * @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
+ * the operation will be done by byte (8-bit)
+ * @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
+ * the operation will be done by half word (16-bit)
+ * @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
+ * the operation will be done by word (32-bit)
+ * @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
+ * the operation will be done by double word (64-bit)
+ *
+ * @param Banks Banks to be erased
+ * This parameter can be one of the following values:
+ * @arg FLASH_BANK_1: Bank1 to be erased
+ * @arg FLASH_BANK_2: Bank2 to be erased
+ * @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased
+ *
+ * @retval HAL Status
+ */
+static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks)
+{
+ /* Check the parameters */
+ assert_param(IS_VOLTAGERANGE(VoltageRange));
+ assert_param(IS_FLASH_BANK(Banks));
+
+ /* if the previous operation is completed, proceed to erase all sectors */
+ CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE);
+
+ if(Banks == FLASH_BANK_BOTH)
+ {
+ /* bank1 & bank2 will be erased*/
+ FLASH->CR |= FLASH_MER_BIT;
+ }
+ else if(Banks == FLASH_BANK_1)
+ {
+ /*Only bank1 will be erased*/
+ FLASH->CR |= FLASH_CR_MER1;
+ }
+ else
+ {
+ /*Only bank2 will be erased*/
+ FLASH->CR |= FLASH_CR_MER2;
+ }
+ FLASH->CR |= FLASH_CR_STRT | ((uint32_t)VoltageRange <<8U);
+}
+
+/**
+ * @brief Erase the specified FLASH memory sector
+ * @param Sector FLASH sector to erase
+ * The value of this parameter depend on device used within the same series
+ * @param VoltageRange The device voltage range which defines the erase parallelism.
+ * This parameter can be one of the following values:
+ * @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
+ * the operation will be done by byte (8-bit)
+ * @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
+ * the operation will be done by half word (16-bit)
+ * @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
+ * the operation will be done by word (32-bit)
+ * @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
+ * the operation will be done by double word (64-bit)
+ *
+ * @retval None
+ */
+void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange)
+{
+ uint32_t tmp_psize = 0U;
+
+ /* Check the parameters */
+ assert_param(IS_FLASH_SECTOR(Sector));
+ assert_param(IS_VOLTAGERANGE(VoltageRange));
+
+ if(VoltageRange == FLASH_VOLTAGE_RANGE_1)
+ {
+ tmp_psize = FLASH_PSIZE_BYTE;
+ }
+ else if(VoltageRange == FLASH_VOLTAGE_RANGE_2)
+ {
+ tmp_psize = FLASH_PSIZE_HALF_WORD;
+ }
+ else if(VoltageRange == FLASH_VOLTAGE_RANGE_3)
+ {
+ tmp_psize = FLASH_PSIZE_WORD;
+ }
+ else
+ {
+ tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
+ }
+
+ /* Need to add offset of 4 when sector higher than FLASH_SECTOR_11 */
+ if(Sector > FLASH_SECTOR_11)
+ {
+ Sector += 4U;
+ }
+ /* If the previous operation is completed, proceed to erase the sector */
+ CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE);
+ FLASH->CR |= tmp_psize;
+ CLEAR_BIT(FLASH->CR, FLASH_CR_SNB);
+ FLASH->CR |= FLASH_CR_SER | (Sector << FLASH_CR_SNB_Pos);
+ FLASH->CR |= FLASH_CR_STRT;
+}
+
+/**
+ * @brief Enable the write protection of the desired bank1 or bank 2 sectors
+ *
+ * @note When the memory read protection level is selected (RDP level = 1),
+ * it is not possible to program or erase the flash sector i if CortexM4
+ * debug features are connected or boot code is executed in RAM, even if nWRPi = 1
+ * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).
+ *
+ * @param WRPSector specifies the sector(s) to be write protected.
+ * This parameter can be one of the following values:
+ * @arg WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_23
+ * @arg OB_WRP_SECTOR_All
+ * @note BANK2 starts from OB_WRP_SECTOR_12
+ *
+ * @param Banks Enable write protection on all the sectors for the specific bank
+ * This parameter can be one of the following values:
+ * @arg FLASH_BANK_1: WRP on all sectors of bank1
+ * @arg FLASH_BANK_2: WRP on all sectors of bank2
+ * @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2
+ *
+ * @retval HAL FLASH State
+ */
+static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks)
+{
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Check the parameters */
+ assert_param(IS_OB_WRP_SECTOR(WRPSector));
+ assert_param(IS_FLASH_BANK(Banks));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ if(((WRPSector == OB_WRP_SECTOR_All) && ((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))) ||
+ (WRPSector < OB_WRP_SECTOR_12))
+ {
+ if(WRPSector == OB_WRP_SECTOR_All)
+ {
+ /*Write protection on all sector of BANK1*/
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~(WRPSector>>12));
+ }
+ else
+ {
+ /*Write protection done on sectors of BANK1*/
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~WRPSector);
+ }
+ }
+ else
+ {
+ /*Write protection done on sectors of BANK2*/
+ *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~(WRPSector>>12));
+ }
+
+ /*Write protection on all sector of BANK2*/
+ if((WRPSector == OB_WRP_SECTOR_All) && (Banks == FLASH_BANK_BOTH))
+ {
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~(WRPSector>>12));
+ }
+ }
+
+ }
+ return status;
+}
+
+/**
+ * @brief Disable the write protection of the desired bank1 or bank 2 sectors
+ *
+ * @note When the memory read protection level is selected (RDP level = 1),
+ * it is not possible to program or erase the flash sector i if CortexM4
+ * debug features are connected or boot code is executed in RAM, even if nWRPi = 1
+ * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).
+ *
+ * @param WRPSector specifies the sector(s) to be write protected.
+ * This parameter can be one of the following values:
+ * @arg WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_23
+ * @arg OB_WRP_Sector_All
+ * @note BANK2 starts from OB_WRP_SECTOR_12
+ *
+ * @param Banks Disable write protection on all the sectors for the specific bank
+ * This parameter can be one of the following values:
+ * @arg FLASH_BANK_1: Bank1 to be erased
+ * @arg FLASH_BANK_2: Bank2 to be erased
+ * @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased
+ *
+ * @retval HAL Status
+ */
+static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks)
+{
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Check the parameters */
+ assert_param(IS_OB_WRP_SECTOR(WRPSector));
+ assert_param(IS_FLASH_BANK(Banks));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ if(((WRPSector == OB_WRP_SECTOR_All) && ((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))) ||
+ (WRPSector < OB_WRP_SECTOR_12))
+ {
+ if(WRPSector == OB_WRP_SECTOR_All)
+ {
+ /*Write protection on all sector of BANK1*/
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)(WRPSector>>12);
+ }
+ else
+ {
+ /*Write protection done on sectors of BANK1*/
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)WRPSector;
+ }
+ }
+ else
+ {
+ /*Write protection done on sectors of BANK2*/
+ *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)(WRPSector>>12);
+ }
+
+ /*Write protection on all sector of BANK2*/
+ if((WRPSector == OB_WRP_SECTOR_All) && (Banks == FLASH_BANK_BOTH))
+ {
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)(WRPSector>>12);
+ }
+ }
+
+ }
+
+ return status;
+}
+
+/**
+ * @brief Configure the Dual Bank Boot.
+ *
+ * @note This function can be used only for STM32F42xxx/43xxx devices.
+ *
+ * @param BootConfig specifies the Dual Bank Boot Option byte.
+ * This parameter can be one of the following values:
+ * @arg OB_Dual_BootEnabled: Dual Bank Boot Enable
+ * @arg OB_Dual_BootDisabled: Dual Bank Boot Disabled
+ * @retval None
+ */
+static HAL_StatusTypeDef FLASH_OB_BootConfig(uint8_t BootConfig)
+{
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Check the parameters */
+ assert_param(IS_OB_BOOT(BootConfig));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ /* Set Dual Bank Boot */
+ *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BFB2);
+ *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= BootConfig;
+ }
+
+ return status;
+}
+
+/**
+ * @brief Enable the read/write protection (PCROP) of the desired
+ * sectors of Bank 1 and/or Bank 2.
+ * @note This function can be used only for STM32F42xxx/43xxx devices.
+ * @param SectorBank1 Specifies the sector(s) to be read/write protected or unprotected for bank1.
+ * This parameter can be one of the following values:
+ * @arg OB_PCROP: A value between OB_PCROP_SECTOR_0 and OB_PCROP_SECTOR_11
+ * @arg OB_PCROP_SECTOR__All
+ * @param SectorBank2 Specifies the sector(s) to be read/write protected or unprotected for bank2.
+ * This parameter can be one of the following values:
+ * @arg OB_PCROP: A value between OB_PCROP_SECTOR_12 and OB_PCROP_SECTOR_23
+ * @arg OB_PCROP_SECTOR__All
+ * @param Banks Enable PCROP protection on all the sectors for the specific bank
+ * This parameter can be one of the following values:
+ * @arg FLASH_BANK_1: WRP on all sectors of bank1
+ * @arg FLASH_BANK_2: WRP on all sectors of bank2
+ * @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2
+ *
+ * @retval HAL Status
+ */
+static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks)
+{
+ HAL_StatusTypeDef status = HAL_OK;
+
+ assert_param(IS_FLASH_BANK(Banks));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ if((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))
+ {
+ assert_param(IS_OB_PCROP(SectorBank1));
+ /*Write protection done on sectors of BANK1*/
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)SectorBank1;
+ }
+ else
+ {
+ assert_param(IS_OB_PCROP(SectorBank2));
+ /*Write protection done on sectors of BANK2*/
+ *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)SectorBank2;
+ }
+
+ /*Write protection on all sector of BANK2*/
+ if(Banks == FLASH_BANK_BOTH)
+ {
+ assert_param(IS_OB_PCROP(SectorBank2));
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ /*Write protection done on sectors of BANK2*/
+ *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)SectorBank2;
+ }
+ }
+
+ }
+
+ return status;
+}
+
+
+/**
+ * @brief Disable the read/write protection (PCROP) of the desired
+ * sectors of Bank 1 and/or Bank 2.
+ * @note This function can be used only for STM32F42xxx/43xxx devices.
+ * @param SectorBank1 specifies the sector(s) to be read/write protected or unprotected for bank1.
+ * This parameter can be one of the following values:
+ * @arg OB_PCROP: A value between OB_PCROP_SECTOR_0 and OB_PCROP_SECTOR_11
+ * @arg OB_PCROP_SECTOR__All
+ * @param SectorBank2 Specifies the sector(s) to be read/write protected or unprotected for bank2.
+ * This parameter can be one of the following values:
+ * @arg OB_PCROP: A value between OB_PCROP_SECTOR_12 and OB_PCROP_SECTOR_23
+ * @arg OB_PCROP_SECTOR__All
+ * @param Banks Disable PCROP protection on all the sectors for the specific bank
+ * This parameter can be one of the following values:
+ * @arg FLASH_BANK_1: WRP on all sectors of bank1
+ * @arg FLASH_BANK_2: WRP on all sectors of bank2
+ * @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2
+ *
+ * @retval HAL Status
+ */
+static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks)
+{
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Check the parameters */
+ assert_param(IS_FLASH_BANK(Banks));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ if((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))
+ {
+ assert_param(IS_OB_PCROP(SectorBank1));
+ /*Write protection done on sectors of BANK1*/
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~SectorBank1);
+ }
+ else
+ {
+ /*Write protection done on sectors of BANK2*/
+ assert_param(IS_OB_PCROP(SectorBank2));
+ *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~SectorBank2);
+ }
+
+ /*Write protection on all sector of BANK2*/
+ if(Banks == FLASH_BANK_BOTH)
+ {
+ assert_param(IS_OB_PCROP(SectorBank2));
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ /*Write protection done on sectors of BANK2*/
+ *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~SectorBank2);
+ }
+ }
+
+ }
+
+ return status;
+
+}
+
+#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx || STM32F469xx || STM32F479xx */
+
+#if defined(STM32F405xx) || defined(STM32F415xx) || defined(STM32F407xx) || defined(STM32F417xx) ||\
+ defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F410Tx) || defined(STM32F410Cx) ||\
+ defined(STM32F410Rx) || defined(STM32F411xE) || defined(STM32F446xx) || defined(STM32F412Zx) ||\
+ defined(STM32F412Vx) || defined(STM32F412Rx) || defined(STM32F412Cx) || defined(STM32F413xx) ||\
+ defined(STM32F423xx)
+/**
+ * @brief Mass erase of FLASH memory
+ * @param VoltageRange The device voltage range which defines the erase parallelism.
+ * This parameter can be one of the following values:
+ * @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
+ * the operation will be done by byte (8-bit)
+ * @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
+ * the operation will be done by half word (16-bit)
+ * @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
+ * the operation will be done by word (32-bit)
+ * @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
+ * the operation will be done by double word (64-bit)
+ *
+ * @param Banks Banks to be erased
+ * This parameter can be one of the following values:
+ * @arg FLASH_BANK_1: Bank1 to be erased
+ *
+ * @retval None
+ */
+static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks)
+{
+ /* Check the parameters */
+ assert_param(IS_VOLTAGERANGE(VoltageRange));
+ assert_param(IS_FLASH_BANK(Banks));
+
+ /* If the previous operation is completed, proceed to erase all sectors */
+ CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE);
+ FLASH->CR |= FLASH_CR_MER;
+ FLASH->CR |= FLASH_CR_STRT | ((uint32_t)VoltageRange <<8U);
+}
+
+/**
+ * @brief Erase the specified FLASH memory sector
+ * @param Sector FLASH sector to erase
+ * The value of this parameter depend on device used within the same series
+ * @param VoltageRange The device voltage range which defines the erase parallelism.
+ * This parameter can be one of the following values:
+ * @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
+ * the operation will be done by byte (8-bit)
+ * @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
+ * the operation will be done by half word (16-bit)
+ * @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
+ * the operation will be done by word (32-bit)
+ * @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
+ * the operation will be done by double word (64-bit)
+ *
+ * @retval None
+ */
+void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange)
+{
+ uint32_t tmp_psize = 0U;
+
+ /* Check the parameters */
+ assert_param(IS_FLASH_SECTOR(Sector));
+ assert_param(IS_VOLTAGERANGE(VoltageRange));
+
+ if(VoltageRange == FLASH_VOLTAGE_RANGE_1)
+ {
+ tmp_psize = FLASH_PSIZE_BYTE;
+ }
+ else if(VoltageRange == FLASH_VOLTAGE_RANGE_2)
+ {
+ tmp_psize = FLASH_PSIZE_HALF_WORD;
+ }
+ else if(VoltageRange == FLASH_VOLTAGE_RANGE_3)
+ {
+ tmp_psize = FLASH_PSIZE_WORD;
+ }
+ else
+ {
+ tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
+ }
+
+ /* If the previous operation is completed, proceed to erase the sector */
+ CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE);
+ FLASH->CR |= tmp_psize;
+ CLEAR_BIT(FLASH->CR, FLASH_CR_SNB);
+ FLASH->CR |= FLASH_CR_SER | (Sector << FLASH_CR_SNB_Pos);
+ FLASH->CR |= FLASH_CR_STRT;
+}
+
+/**
+ * @brief Enable the write protection of the desired bank 1 sectors
+ *
+ * @note When the memory read protection level is selected (RDP level = 1),
+ * it is not possible to program or erase the flash sector i if CortexM4
+ * debug features are connected or boot code is executed in RAM, even if nWRPi = 1
+ * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).
+ *
+ * @param WRPSector specifies the sector(s) to be write protected.
+ * The value of this parameter depend on device used within the same series
+ *
+ * @param Banks Enable write protection on all the sectors for the specific bank
+ * This parameter can be one of the following values:
+ * @arg FLASH_BANK_1: WRP on all sectors of bank1
+ *
+ * @retval HAL Status
+ */
+static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks)
+{
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Check the parameters */
+ assert_param(IS_OB_WRP_SECTOR(WRPSector));
+ assert_param(IS_FLASH_BANK(Banks));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~WRPSector);
+ }
+
+ return status;
+}
+
+/**
+ * @brief Disable the write protection of the desired bank 1 sectors
+ *
+ * @note When the memory read protection level is selected (RDP level = 1),
+ * it is not possible to program or erase the flash sector i if CortexM4
+ * debug features are connected or boot code is executed in RAM, even if nWRPi = 1
+ * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).
+ *
+ * @param WRPSector specifies the sector(s) to be write protected.
+ * The value of this parameter depend on device used within the same series
+ *
+ * @param Banks Enable write protection on all the sectors for the specific bank
+ * This parameter can be one of the following values:
+ * @arg FLASH_BANK_1: WRP on all sectors of bank1
+ *
+ * @retval HAL Status
+ */
+static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks)
+{
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Check the parameters */
+ assert_param(IS_OB_WRP_SECTOR(WRPSector));
+ assert_param(IS_FLASH_BANK(Banks));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)WRPSector;
+ }
+
+ return status;
+}
+#endif /* STM32F40xxx || STM32F41xxx || STM32F401xx || STM32F410xx || STM32F411xE || STM32F446xx || STM32F412Zx || STM32F412Vx || STM32F412Rx || STM32F412Cx
+ STM32F413xx || STM32F423xx */
+
+#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F410Tx) || defined(STM32F410Cx) || defined(STM32F410Rx) ||\
+ defined(STM32F411xE) || defined(STM32F446xx) || defined(STM32F412Zx) || defined(STM32F412Vx) || defined(STM32F412Rx) ||\
+ defined(STM32F412Cx) || defined(STM32F413xx) || defined(STM32F423xx)
+/**
+ * @brief Enable the read/write protection (PCROP) of the desired sectors.
+ * @note This function can be used only for STM32F401xx devices.
+ * @param Sector specifies the sector(s) to be read/write protected or unprotected.
+ * This parameter can be one of the following values:
+ * @arg OB_PCROP: A value between OB_PCROP_Sector0 and OB_PCROP_Sector5
+ * @arg OB_PCROP_Sector_All
+ * @retval HAL Status
+ */
+static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t Sector)
+{
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Check the parameters */
+ assert_param(IS_OB_PCROP(Sector));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)Sector;
+ }
+
+ return status;
+}
+
+
+/**
+ * @brief Disable the read/write protection (PCROP) of the desired sectors.
+ * @note This function can be used only for STM32F401xx devices.
+ * @param Sector specifies the sector(s) to be read/write protected or unprotected.
+ * This parameter can be one of the following values:
+ * @arg OB_PCROP: A value between OB_PCROP_Sector0 and OB_PCROP_Sector5
+ * @arg OB_PCROP_Sector_All
+ * @retval HAL Status
+ */
+static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t Sector)
+{
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Check the parameters */
+ assert_param(IS_OB_PCROP(Sector));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~Sector);
+ }
+
+ return status;
+
+}
+#endif /* STM32F401xC || STM32F401xE || STM32F411xE || STM32F446xx || STM32F412Zx || STM32F412Vx || STM32F412Rx || STM32F412Cx
+ STM32F413xx || STM32F423xx */
+
+/**
+ * @brief Set the read protection level.
+ * @param Level specifies the read protection level.
+ * This parameter can be one of the following values:
+ * @arg OB_RDP_LEVEL_0: No protection
+ * @arg OB_RDP_LEVEL_1: Read protection of the memory
+ * @arg OB_RDP_LEVEL_2: Full chip protection
+ *
+ * @note WARNING: When enabling OB_RDP level 2 it's no more possible to go back to level 1 or 0
+ *
+ * @retval HAL Status
+ */
+static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level)
+{
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Check the parameters */
+ assert_param(IS_OB_RDP_LEVEL(Level));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ *(__IO uint8_t*)OPTCR_BYTE1_ADDRESS = Level;
+ }
+
+ return status;
+}
+
+/**
+ * @brief Program the FLASH User Option Byte: IWDG_SW / RST_STOP / RST_STDBY.
+ * @param Iwdg Selects the IWDG mode
+ * This parameter can be one of the following values:
+ * @arg OB_IWDG_SW: Software IWDG selected
+ * @arg OB_IWDG_HW: Hardware IWDG selected
+ * @param Stop Reset event when entering STOP mode.
+ * This parameter can be one of the following values:
+ * @arg OB_STOP_NO_RST: No reset generated when entering in STOP
+ * @arg OB_STOP_RST: Reset generated when entering in STOP
+ * @param Stdby Reset event when entering Standby mode.
+ * This parameter can be one of the following values:
+ * @arg OB_STDBY_NO_RST: No reset generated when entering in STANDBY
+ * @arg OB_STDBY_RST: Reset generated when entering in STANDBY
+ * @retval HAL Status
+ */
+static HAL_StatusTypeDef FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby)
+{
+ uint8_t optiontmp = 0xFF;
+ HAL_StatusTypeDef status = HAL_OK;
+
+ /* Check the parameters */
+ assert_param(IS_OB_IWDG_SOURCE(Iwdg));
+ assert_param(IS_OB_STOP_SOURCE(Stop));
+ assert_param(IS_OB_STDBY_SOURCE(Stdby));
+
+ /* Wait for last operation to be completed */
+ status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
+
+ if(status == HAL_OK)
+ {
+ /* Mask OPTLOCK, OPTSTRT, BOR_LEV and BFB2 bits */
+ optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE0_ADDRESS) & (uint8_t)0x1F);
+
+ /* Update User Option Byte */
+ *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS = Iwdg | (uint8_t)(Stdby | (uint8_t)(Stop | ((uint8_t)optiontmp)));
+ }
+
+ return status;
+}
+
+/**
+ * @brief Set the BOR Level.
+ * @param Level specifies the Option Bytes BOR Reset Level.
+ * This parameter can be one of the following values:
+ * @arg OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
+ * @arg OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
+ * @arg OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
+ * @arg OB_BOR_OFF: Supply voltage ranges from 1.62 to 2.1 V
+ * @retval HAL Status
+ */
+static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level)
+{
+ /* Check the parameters */
+ assert_param(IS_OB_BOR_LEVEL(Level));
+
+ /* Set the BOR Level */
+ *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BOR_LEV);
+ *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= Level;
+
+ return HAL_OK;
+
+}
+
+/**
+ * @brief Return the FLASH User Option Byte value.
+ * @retval uint8_t FLASH User Option Bytes values: IWDG_SW(Bit0), RST_STOP(Bit1)
+ * and RST_STDBY(Bit2).
+ */
+static uint8_t FLASH_OB_GetUser(void)
+{
+ /* Return the User Option Byte */
+ return ((uint8_t)(FLASH->OPTCR & 0xE0));
+}
+
+/**
+ * @brief Return the FLASH Write Protection Option Bytes value.
+ * @retval uint16_t FLASH Write Protection Option Bytes value
+ */
+static uint16_t FLASH_OB_GetWRP(void)
+{
+ /* Return the FLASH write protection Register value */
+ return (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS));
+}
+
+/**
+ * @brief Returns the FLASH Read Protection level.
+ * @retval FLASH ReadOut Protection Status:
+ * This parameter can be one of the following values:
+ * @arg OB_RDP_LEVEL_0: No protection
+ * @arg OB_RDP_LEVEL_1: Read protection of the memory
+ * @arg OB_RDP_LEVEL_2: Full chip protection
+ */
+static uint8_t FLASH_OB_GetRDP(void)
+{
+ uint8_t readstatus = OB_RDP_LEVEL_0;
+
+ if((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS) == (uint8_t)OB_RDP_LEVEL_2))
+ {
+ readstatus = OB_RDP_LEVEL_2;
+ }
+ else if((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS) == (uint8_t)OB_RDP_LEVEL_1))
+ {
+ readstatus = OB_RDP_LEVEL_1;
+ }
+ else
+ {
+ readstatus = OB_RDP_LEVEL_0;
+ }
+
+ return readstatus;
+}
+
+/**
+ * @brief Returns the FLASH BOR level.
+ * @retval uint8_t The FLASH BOR level:
+ * - OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
+ * - OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
+ * - OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
+ * - OB_BOR_OFF : Supply voltage ranges from 1.62 to 2.1 V
+ */
+static uint8_t FLASH_OB_GetBOR(void)
+{
+ /* Return the FLASH BOR level */
+ return (uint8_t)(*(__IO uint8_t *)(OPTCR_BYTE0_ADDRESS) & (uint8_t)0x0C);
+}
+
+/**
+ * @brief Flush the instruction and data caches
+ * @retval None
+ */
+void FLASH_FlushCaches(void)
+{
+ /* Flush instruction cache */
+ if(READ_BIT(FLASH->ACR, FLASH_ACR_ICEN)!= RESET)
+ {
+ /* Disable instruction cache */
+ __HAL_FLASH_INSTRUCTION_CACHE_DISABLE();
+ /* Reset instruction cache */
+ __HAL_FLASH_INSTRUCTION_CACHE_RESET();
+ /* Enable instruction cache */
+ __HAL_FLASH_INSTRUCTION_CACHE_ENABLE();
+ }
+
+ /* Flush data cache */
+ if(READ_BIT(FLASH->ACR, FLASH_ACR_DCEN) != RESET)
+ {
+ /* Disable data cache */
+ __HAL_FLASH_DATA_CACHE_DISABLE();
+ /* Reset data cache */
+ __HAL_FLASH_DATA_CACHE_RESET();
+ /* Enable data cache */
+ __HAL_FLASH_DATA_CACHE_ENABLE();
+ }
+}
+
+/**
+ * @}
+ */
+
+#endif /* HAL_FLASH_MODULE_ENABLED */
+
+/**
+ * @}
+ */
+
+/**
+ * @}
+ */
+
+/************************ (C) COPYRIGHT STMicroelectronics *****END OF FILE****/