Revision 0:67deb3c12459, committed 2015-06-30
- Comitter:
- ThaDipshit
- Date:
- Tue Jun 30 18:48:35 2015 +0000
- Commit message:
- Gauge dingen
Changed in this revision
--- /dev/null Thu Jan 01 00:00:00 1970 +0000
+++ b/main.cpp Tue Jun 30 18:48:35 2015 +0000
@@ -0,0 +1,134 @@
+#include "mbed.h"
+
+ I2C master(P0_29, P0_28);
+ Serial pc(USBTX, USBRX); // tx, rx
+ int gauge = 0x34 << 1;
+ DigitalOut led_full(P0_17);
+ DigitalOut led_low(P0_21);
+
+const char *byte_to_binary(int x)
+{
+ static char b[9];
+ b[0] = '\0';
+
+ int z;
+ for (z = 128; z > 0; z >>= 1)
+ {
+ strcat(b, ((x & z) == z) ? "1" : "0");
+ }
+
+ return b;
+}
+
+void write_register(int address, int value){
+ char data[2] = {address, value};
+ int status = master.write(gauge, data, 2);
+ printf( " \"i2c.write()\" done. status = 0x%02X\r\n", status );
+}
+
+
+ int read_register(int address){
+ char reg_address[1] = {address};
+ char stored_value[2];
+ int readfail1, readfail2;
+ readfail1 = master.write(gauge, reg_address, 1, true);
+ readfail2 = master.read(gauge, stored_value, 1);
+ if (readfail1 | readfail2) {
+ pc.printf(" read failed ");
+ }
+ return (int)stored_value[0];
+}
+
+
+int read_voltage (void){
+ char data[2], volt_reg[1];
+ volt_reg[0] = 0x0c;
+ int writefail, readfail;
+ writefail = master.write(gauge, volt_reg, 1, true);
+ readfail = master.read(gauge, data, 2);
+ //pc.printf("voltage readfail: %d, voltage writefail: %d \r\n", readfail,writefail);
+ int rawVolt= (((data[0] &~(1<<7))<<3)|((data[1]>>5)&0xF));
+ return (float)(rawVolt*4.88);
+}
+
+int read_current(void) {
+ char data[2], curReg[1];
+ curReg[0] = 0x0E;
+ int rawCur;
+ master.write(gauge, curReg, 1, true);
+ master.read(gauge, data, 2);
+ if (data[0]>>7 == 1) {
+ rawCur = (((data[0]<<8)|data[1])^0xFFFF)+1;
+ } else {
+ rawCur = (((data[0]<<8)|data[1]));
+ }
+ return (float)(rawCur*0.07813);
+}
+
+ int main() {
+ wait(4);
+ int i = 0;
+ master.frequency(100000);
+
+ int ACRmsbA = 0x10, ACRlsbA = 0x11;
+ int ctrlA = 0x60, ABA = 0x61, acmsbA = 0x62, aclsbA = 0x63, vchgA = 0x64, iminA = 0x65, vaeA = 0x66, iaeA = 0x67, ae40A = 0x68, rsnsA = 0x69, full40msbA = 0x6a;
+ int full40lsbA = 0x6b, full3040A = 0x6c, full2030A = 0x6d, full1020A = 0x6e, full0010A = 0x6F, AE3040A = 0x70, AE2030A = 0x71, AE1020A = 0x72, AE0010A = 0x73;
+ int SE3040A = 0x74, SE2030A = 0x75, SE1020A = 0x76, SE0010A = 0x77;
+
+ int ACRmsbV = 0x01; //estimation of current mAh msb, where lsb has a resolution of 312.5e-6 Ah
+ int ACRlsbV = 0xBD; //estimation of current mAh lsb, this totals 0x01BD (=4445) * 312.5e-6 = 0.139 Ah
+ int ctrlV = 0x40;
+ int ABV = 0x00; // accumulation bias = 0
+ int acmsbV = 0x01; //aging capacity, set to rated capacity for defaults
+ int aclsbV = 0xF0; // 0x07a0 (=1952) * 312.5e-6* = 0.610 Ah (grote batterij) 0x01F0 (=496) * 312.5e-6 = 0.155 Ah
+ int vchgV = 0xD0; // fully charged voltage = 0xD0 (=208) * 0.01952 = 4.06016 V
+ int iminV = 0x20; // maximum current to detect a fully charged state: 0x20 (=32) * 0.0025 [A] = 80 mA
+ int vaeV = 0xa0; //active empty voltage 0xa0 (=160) * 0.01952 = 3.1232 V
+ int iaeV = 0x03; //active empty current 0x03 (=3) * 0.01 [A] = 30 mA
+ int ae40V = 0x05; //zie ds2780 guide
+ int rsnsV = 0x32; // 1/0.02=50
+ int full40msbV = 0x01; //slightly less than rated capacity, which is stored in AC
+ int full40lsbV = 0xEA;
+ int full3040V = 0x0e, full2030V = 0x13, full1020V = 0x33, full0010V = 0x3b;
+ int AE3040V = 0x05, AE2030V = 0x0b, AE1020V = 0x12, AE0010V = 0x27;
+ int SE3040V = 0x03, SE2030V = 0x04, SE1020V = 0x07, SE0010V = 0x17;
+
+ // niet vergeten vooraan addresses te zetten mocht learn niet lukken: ACRmsbA, ACRlsbA
+ // niet vergeten vooraan values te zetten mocht learn niet lukken: ACRmsbV, ACRlsbV
+ int addresses[] = {ctrlA, ABA, acmsbA, aclsbA, vchgA, iminA, vaeA, iaeA, ae40A, rsnsA, full40msbA, full40lsbA, full3040A, full2030A, full1020A, full0010A, AE3040A, AE2030A, AE1020A, AE0010A, SE3040A, SE2030A, SE1020A, SE0010A};
+ int values[] = {ctrlV, ABV, acmsbV, aclsbV, vchgV, iminV, vaeV, iaeV, ae40V, rsnsV, full40msbV, full40lsbV, full3040V, full2030V, full1020V, full0010V, AE3040V, AE2030V, AE1020V, AE0010V, SE3040V, SE2030V, SE1020V, SE0010V};
+
+ //for ( i = 0; i <= sizeof(addresses)/4-1; i++){
+ // pc.printf("Writing into register: %d \t value: %d\r\n",addresses[i], values[i]);
+ // write_register( addresses[i], values[i] ); //write the register values to the shadow ram
+ //}
+
+ //write_register( 0xFE, 0x44 ); // write the shadow ram to the EEPROM
+ write_register( 0xFE, 0xB4 ); // write the EEPROM values back to the registers
+
+ while(1) {
+ wait(2);
+ pc.printf("ingevulde registers:\n\r");
+ for ( i = 0; i <= sizeof(addresses)/4-1; i++){
+ //test = read_register( addresses[i] );
+ pc.printf( "Reading from register: %d \t value: %d\n\r", addresses[i], read_register(addresses[i]) );
+ }
+ pc.printf("IAVG_msb: %d \t IAVG_lsb: %d \r\n", read_register(0x08), read_register(0x09));
+ pc.printf("current_msb: %d \t current_lsb: %d \r\n", read_register(0x0E), read_register(0x0F));
+ pc.printf("Status: %s\r\n", byte_to_binary(read_register(0x01)));
+ pc.printf("voltage: %d mV\r\n", read_voltage());
+ pc.printf("current: %d mA\r\n", read_current());
+ pc.printf("RARC : %d \r\n", read_register(0x06));
+ pc.printf("RAAC : %d \r\n", read_register(0x03));
+ if (read_register(0x06) >= 100) {
+ led_full = 1;
+ } else {
+ led_full = 0;
+ }
+ if (read_register(0x06) <= 15) {
+ led_low = 1;
+ } else {
+ led_low = 0;
+ }
+ }
+}
\ No newline at end of file
--- /dev/null Thu Jan 01 00:00:00 1970 +0000
+++ b/mbed.bld Tue Jun 30 18:48:35 2015 +0000
@@ -0,0 +1,1 @@
+http://mbed.org/users/mbed_official/code/mbed/builds/cbbeb26dbd92
\ No newline at end of file